半导体前置光放大器的设计和制作要点  

Essentials in Design and Fabrication of Semiconductor Optical Pre-Amplifier

作　　者：李洵 左成亮 董智星 LI Xun;ZUO Chengliang;DONG Zhixing(Shandong University,Jinan 250100,China;McMaster University,Hamilton L8R4K1,Canada;Wuhan National Laboratory for Optoelectronics of Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]山东大学,山东济南250100 [2]麦克马斯特大学 [3]华中科技大学武汉光电国家实验室武汉光电国家研究中心,湖北武汉430074

出　　处：《中兴通讯技术》2018年第4期15-20,共6页ZTE Technology Journal

摘　　要：介绍了用于接收端探测器前置放大的半导体光放大器的核心设计要点及其与普通半导体激光器在实际制作中的几个不同点。半导体前置光放大器的设计核心是如何抑制其中的自发辐射并被伴随放大的噪声,对于边入射型的器件还要考虑其增益偏振相关性的消除。半导体光放大器一般具有少阱和低光场限制因子的长增益区结构,在这点上它与高速直调半导体激光器有着最大的区别。This paper has its focus on the essential design consideration of semiconductor optical amplifiers for optical signal pre-amplification in optical receivers.It also briefs some differences from semiconductor laser diodes in their fabrications.In considering the design of pre-amplifiers,the amplified spontaneous emission(ASE)noise needs to be suppressed and their gain polarization dependence(in edge incidence device only)needs to be eliminated.Semiconductor optical amplifiers also have longer active regions with fewer quantum wells and lower optical confinement factors,which makes them different from directly modulated semiconductor laser diodes.

关 键 词：半导体光放大器 接收端前置放大 ASE噪声 增益偏振相关度 增益-带宽积 饱和功率 

分 类 号：TN722[电子电信—电路与系统]