一种浮地磁控忆阻模拟器设计与特性分析  

Design and characteristic analysis for a kind of floating flux-controlled memristor emulator

作　　者：王将[1] 钱辉[1] 包伯成[1] 徐权[1] 陈墨[1] WANG Jiang;QIAN Hui;BAO Bocheng;XU Quan;CHEN Mo(School of Information Science and Engineering,Changzhou University,Changzhou 213164,Jiangsu Province,China)

机构地区：[1]常州大学信息科学与工程学院,江苏常州213164

出　　处：《电子元件与材料》2018年第9期74-78,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助(61601062)

摘　　要：从忆阻的定义出发,本文提出了一种新的磁控忆阻模型,并采用通用有源电路芯片设计了浮地忆阻电路模拟器。忆阻模型由线性电阻和随时间变化的非线性电阻两部分构成,由非线性电阻参数分析了忆阻模型的频率特性。基于Multisim仿真软件给出了在不同交变信号激励以及不同参数下忆阻电路模拟器的仿真结果,从而研究了其二端口的基本电特性。最后,完成了其硬件电路的实现及性能测试。电路仿真和硬件测试结果均表明:所设计的磁控忆阻电路模拟器具有紧磁滞回线特性,与理论上的忆阻特性相吻合,可为忆阻在电子学领域的应用提供一种器件模拟实体。With the definition of memristor,this paper presented a new kind of flux-controlled memristor model and designed a floating memristor circuit emulator using off-the-shelf active circuit chips.The proposed memristor model is composed of two parts of a linear resistor and a time-varying nonlinear resistor.The frequency characteristics of the memristor model were analyzed by the nonlinear resistance parameter.Based on Multisim simulation software,the simulation results of the memristor circuit emulator with different alternating signal stimuli and different parameters were given and the fundamental electrical properties of two terminals were thereby investigated.At last,the implementation of hardware circuit and the results of performance tests were achieved.The circuit simulations and hardware test results show that the designed flux-controlled memristor circuit emulator exhibits a frequency-dependent pinched hysteresis loop,which accords with the characteristic of memristor theoretically and can provide a kind of simulation entity of the device for memristor applications in the field of electronics.

关 键 词：磁控忆阻器 模拟器 浮地 磁滞回线 频率特性 MULTISIM 

分 类 号：TN602[电子电信—电路与系统]