稀土离子掺杂AlN薄膜发光材料的研究进展  

Research progress of rare earth ion-doped AlN thin film luminescent materials

作　　者：陈飞飞[1] 王晓丹[1] 李祥 曾雄辉[2] CHEN Feifei;WANG Xiaodan;LI Xiang;ZENG Xionghui(Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics,Suzhou University of Science and Technology,Suzhou 215009,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]苏州科技大学数理学院,江苏省微纳热流技术与能源应用重点实验室,江苏苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《功能材料》2018年第9期9056-9060,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61306004,51002179);江苏省自然科学基金资助项目(BK20130263);江苏省十三五重点学科资助项目(20168765);苏州科技大学研究生培养创新工程资助项目(SKCX17_034)。

摘　　要：纤锌矿结构氮化铝(AlN)是一种典型的直接宽禁带化合物半导体,稀土离子掺入后可作为发光材料应用在显示、照明等众多领域。对稀土掺杂氮化铝薄膜的制备方法,结构损伤、发光特性、器件研究等进行了综述,并着重总结了影响发光性能的因素。最后对该研究方向进行了展望。Wurtzite aluminum nitride(AlN)is a compound semiconductor with typical direct wide band gap.Rare earth ion-doped AlN films as luminescent materials can be applied in many fields,such as display,lighting and so on.In this paper,preparation methods,structure damage,luminescence characteristics and device of rare earth doped aluminum nitride thin films are reviewed,and the factors influencing the luminescence properties are emphatically summarized.Finally,the future research direction is prospected.

关 键 词：氮化铝 稀土离子 发光特性 器件 

分 类 号：TN304[电子电信—物理电子学]