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作 者:陈一达 朱归胜[1] 徐华蕊[1] 董玲 江旭鹏 史忠峰 廖微莉 CHEN Yida;ZHU Guisheng;XU Huarui;DONG Ling;JIANG Xupeng;SHI Zhongfeng(Guangxi Key Laboratory of Information Materials,School of and Guilin University of Electronic Science and Technology,Guilin 541004,China)
机构地区:[1]桂林电子科技大学材料科学与工程学院,广西信息材料重点实验室,广西桂林541004
出 处:《功能材料》2018年第9期9127-9131,9136,共6页Journal of Functional Materials
基 金:国家自然科学基金资助项目(61540073);广西自然科学基金资助项目(2016GXNSFAA380053);广西信息材料重点实验室基金资助项目(161014-Z).
摘 要:通过调节磁控溅射过程中通入氧气的流量,在二氧化硅基片上制备具有"富氧层+贫氧层"结构的(400)高度择优的ITO薄膜。采用XRD、SEM等对薄膜的微观结构进行了表征,并对其可见光透过率和红外反射率进行了研究。结果显示,富氧层厚度薄时有利于获得(400)方向择优的ITO薄膜,同时(400)方向的XRD衍射峰强度随富氧层厚度的增加而降低。制备所得的厚度为350nm的ITO薄膜断面呈柱晶状,其表面粗糙度仅为2.9nm,可见光透光率可达87%,2.5~15μm波长的红外反射率为85%,薄膜的电阻率为1.32×10^(-4)Ω·cm,载流子浓度和迁移率分别为1.24×1021cm^(-3)和38.18cm^2/(V·s)。"富氧层+贫氧层"的结构有利于同时获得高可见光透过率和高红外反射率的ITO薄膜,为ITO薄膜应用于红外隐身领域提供了新的思路。In the study,a highly(400)preferred ITO films were prepared on silica substrates by adjusting the oxygen-flow during magnetron sputtering and the films have“oxygen-poor+oxygen-enriched”structure.The microstructure of the thin film was characterized by XRD and SEM,and its visible transmittance and IR reflectivity were studied.The results showed a high(400)preferred ITO film can be obtained from thin oxygen-enriched layer,while the(400)peak intensity decreased with the enlargement of the oxygen-enriched thickness.The fabricated ITO films of 350 nm thickness are columnar crystals.The surface roughness of the ITO thin films is only 2.9 nm,the visible light transmittance can reach the 87%,and the IR reflectivity is 85%from 2.5 to 15μm wavelength.The resistivity of the film is 1.32×10-4Ω·cm,and the carrier concentration and migration rate are 1.24×10 21 cm-3 and 38.18 cm 2/(V·s).The structure of“oxygen-enriched+oxygen-poor layer”is favorable for obtaining ITO films with high visible transmittance and high IR reflectivity simultaneously.The application of ITO film in the field of IR stealth has a new idea.
关 键 词:氧化铟锡薄膜 直流溅射 (400)晶面择优 红外反射率 可见光透过率
分 类 号:TM22[一般工业技术—材料科学与工程]
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