增强短波红外InGaAs探测器透过率的纳米光天线研究  

Enhanced Transmissivity of InP-based InGaAs Photodetectors by Optical Nano-antenna

作　　者：姚鹏飞 李淘[1,2] 李雪[1,2] 邵秀梅[1,2] 龚海梅[1,2] YAO Pengfei;LI Tao;LI Xue;SHAO Xiumei;GONG Haimei(State Key Laboratory of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]传感技术国家重点实验室,中国科学院上海技术物理研究所,上海200083 [2]中国科学院红外成像材料与器件重点实验室,中国科学院上海技术物理研究所,上海200083 [3]中国科学院大学,北京100049

出　　处：《红外技术》2018年第9期843-846,共4页Infrared Technology

基　　金：国家自然科学基金青年科学基金项目(61604159)和国家自然科学基金青年科学基金项目(61704180)

摘　　要：过去几十年中,短波红外InGaAs探测器被广泛用于近红外探测系统中,通过将InGaAs光电探测器与纳米光天线结合可以增强光吸收并提高量子效率。然而,这种纳米光天线往往由聚焦离子束或电子束光刻制备而成,制备成本较高。本文介绍了一种更经济的沉积法来制备纳米光天线。用沉积法制备了纳米Ag颗粒阵列,Ag球平均半径为200 nm。研究了Ag纳米球阵列的表面等离子体效应对InGaAs光电探测器光吸收性能的影响,发现在整个近红外波段,InGaAs光电探测器帽层的透过率均显著提高。并且发现SiO2涂层激发了局域表面等离子体共振,分析了其对波长1?m附近的入射光的透过率增强效应。Over the past few decades,the InP-based InGaAs photodetector has become an ideal choice for near-infrared detection systems.A possible way to increase its light absorption and quantum efficiency is by combining InGaAs photodetectors with optical nano-antennas.However,thes enano-antennas are usually prepared by focal-ion-or electron-beam lithography,which are time-consuming and costly processes.In this paper,we introduce an economical deposition method to fabricate optical nano-antennas.A Ag nanoparticle array,with 200 nm average radius,was obtained by deposition.The applicability of local surface plasmas to Ag nanoparticles for improving the absorbance of InP-based InGaAs photodetectors was investigated.The transmittance of the cap layer of the InGaAs photodetector was enhanced over almost the entire near-infrared spectrum.The enhancement of the transmittance near the 1?m wavelength was also analyzed.It was found that a SiO2 coating stimulates the local surface-plasmon resonance.

关 键 词：InGaAs光电探测器 纳米光天线 表面等离子体 

分 类 号：TN215[电子电信—物理电子学]