单晶硅的电火花线切割过程建模与优化研究  

Modeling and Optimization of WEDM for Monocrystalline SiC

作　　者：卜文浩 李淑娟[1] 马维东 陈玉龙 Bu Wenhao;Li Shujuan;Ma Weidong;Chen Yulong(School of Mechanical and Precision Instrument Engineering,Xi′an University of Technology,Xi′an 710048,China)

机构地区：[1]西安理工大学机械与精密仪器工程学院,西安710048

出　　处：《机械科学与技术》2018年第10期1544-1550,共7页Mechanical Science and Technology for Aerospace Engineering

基　　金：国家自然科学基金项目(51575442)资助

摘　　要：单晶硅的电火花线切割过程中,切削效率与表面粗糙度是两个重要的目标,生产过程中希望提高单晶硅切割效率的同时保证工件表面质量。运用响应曲面法建立关于单晶硅电火花线切割加工过程中切割效率与表面粗糙度的目标函数;采用第二代基于强度帕累托进化算法(SPEA-Ⅱ)得出一组关于切割效率与表面粗糙度的帕累托最优解。在相同条件下将SPEA-Ⅱ得到的帕累托最优解与第二代非支配排序遗传算法(NSGA-Ⅱ)得到的解集进行对比,测试两种算法对目标函数的优化性能。The cutting efficiency and the surface roughness of the monocrystalline silicon are two important indexes which are tradeoff in the production for wire-cut electrical discharge machining(WEDM),and it is hoped to improve the cutting efficiency of monocrystalline silicon while ensuring the surface quality of the work-piece.This paper develops the objective function of the cutting efficiency and surface roughness of monocrystalline silicon WEDM by using the response surface methodology(RSM).A set of Pareto optimal solutions for cutting efficiency and surface roughness are obtained by improved strength Pareto evolutionary algorithm(SPEA-Ⅱ).The Pareto optimal solution obtained by SPEA-Ⅱis compared with the solution obtained by improving the non-dominated sorting genetic algorithm(NSGA-Ⅱ)under the same conditions.The optimization performance of the two algorithms for objective function is tested.

关 键 词：WEDM 单晶硅 建模 优化 RSM 

分 类 号：TG156[金属学及工艺—热处理]