Mg2Si基热电材料的性能优化研究及其进展  

Research Progress on the Improvement of Thermoelectric Properties of Mg_2Si-based Materials

作　　者：陈君[1,2] 严磊[1] 王超 赵新为[3] 闵忠华[1] CHEN Jun;YAN Lei;WANG Chao;ZHAO Xin-wei;MIN Zhong-hua(Key Laboratory of Fluid and Power Machinery of Ministry of Education,School of Materials Science and Engineering,Xihua University Chengdu 610039;School of Electronic Science and Engineering,University of Electronic Science and Technology of China Chengdu 611731;Department of Physics,Tokyo University of Science Tokyo 162-8601)

机构地区：[1]流体及动力机械教育部重点实验室,西华大学材料科学与工程学院,成都610039 [2]电子科技大学电子科学与工程学院,成都611731 [3]日本东京理科大学理学部物理系,东京162-8601

出　　处：《电子科技大学学报》2018年第5期753-760,共8页Journal of University of Electronic Science and Technology of China

基　　金：教育部春晖计划(Z2015094，Z2015095)；中国博士后科学基金面上项目(2016M602668)；国家自然科学基金(51501156)。

摘　　要：Mg_2Si基半导体是重要的中温热电材料,具有原料丰富、价格低、无毒等优点;其载流子有效质量和迁移率均较高,有望获得优异的电性能,近年来倍受关注。该文综述了Mg_2Si基材料的研究进展,重点探讨了提高其热电性能的措施,对比了不同制备方法的优缺点,最后指出了今后的研究方向。分析表明,目前研究主要集中在n型体系,应加强对p型材料的性能优化探索。掺杂对提高热电性能的效果更显著,通过制备工艺的优化,将掺杂和纳米化两种措施结合,可进一步有效优化。The important mid-temperature thermoelectric materials Mg2Si-based semiconducting compounds have attracted considerable interest due to their abundance,low cost and nontoxic constituents,as well as optimizable electric properties caused by tunable effective mass and mobility of carriers.This paper reviews the latest progress of Mg2Si-based solid solutions.The methods to improve thermoelectric performance are discussed.The comparison of the advantages and drawbacks of various fabrication techniques is proposed.It is shown that,the present researches are focused on the n-type materials,and it is urgent to optimize the p-type materials properties.Doping is an effective method,and combining doping and nanostructuring through the process optimizing can further enhance thermoelectric properties.

关 键 词：掺杂 MG2SI 纳米化 热电性能 

分 类 号：TN3[电子电信—物理电子学]