氧空位缺陷对光催化活性的影响及其机制  被引量:7

Effect of Oxygen Vacancy on Photocatalytic Activity and Relevant Mechanism

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作  者:郝亮 张慧娜[2] 闫建成 程丽君[1] 关苏军 鲁云[4] HAO Liang;ZHANG Huina;YAN Jiancheng;CHENG Lijun;GUAN Sujun;LU Yun(International Joint Center of Low-Carbon Green Process Equipment,Tianjin Key Lab of Integrated Design and On-line Monitoring for Light Industry&Food Machinery and Equipment,College of Mechanical Engineering,Tianjin University of Science&Technology,Tianjin 300222,China;Renai College of Tianjin University,Tianjin 301636,China;Department of Physics,Tokyo University of Science,Tokyo 162-8601,Japan;Graduate School of Science and Engineering,Chiba University,Chiba 263-8522,Japan)

机构地区:[1]天津市低碳绿色过程装备国际联合研究中心,天津市轻工与食品工程机械装备集成设计与在线监控重点实验室,天津科技大学机械工程学院,天津300222 [2]天津大学仁爱学院,天津301636 [3]东京理科大学物理学院,东京162-8601 [4]千叶大学工学研究院机械系,千叶263-8522

出  处:《天津科技大学学报》2018年第5期1-13,72,共14页Journal of Tianjin University of Science & Technology

基  金:国家自然科学基金青年基金资助项目(51404170)

摘  要:氧空位作为最常见且最重要的一类晶体缺陷,对半导体光催化剂的性能有着显著的影响.近年来,通过引入和调控氧空位的方法来改善光催化活性,尤其是可见光性能,成为光催化研究领域的热点之一.本文详细阐述了含氧化合物中存在的氧空位缺陷对光催化剂的电子结构、几何构造、吸光特性、表面吸附解离等的影响,并在此基础上讨论了氧空位对光生电荷分离、光催化选择性、紫外光及可见光催化活性的影响,以期为今后氧空位缺陷调控型高性能光催化材料的设计及开发提供科学依据.Oxygen vacancy,as one of the most common and important crystal defects,remarkably affects the photocatalytic activity of semiconductors.Improvement on the photocatalytic activity through the introduction and mediation of oxygen vacancies has attracted increasing attention in recent years.In this short review,we discussed the influence of oxygen vacancies on the electronic and geometric structures,and the optical absorption and dissociative adsorption properties of oxygenated chemicals.Based on the discussion,the effect of oxygen vacancies on photogenerated charge separation,photocatalytic selectivity,UV light and visible light-responsive photocatalytic activity is also clarified.The review is expected to help the design and development of oxygen vacancy-mediated photocatalyst with high photocatalytic activity.

关 键 词:氧空位 光催化 电荷分离 可见光 光催化活性 

分 类 号:O643.36[理学—物理化学] O644.11[理学—化学]

 

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