基于化学掺杂的碳纳米管二极管  

A diode based on a chemically-doped SWCNT

作　　者：宋传娟[1,2] 杨俊茹 廖成浩[2] 刘晓东 王英 贺蓉 董续盛 钟汉清 刘一剑 张丽英 陈长鑫 SONG Chuan-juan;YANG Jun-ru;LIAO Cheng-hao;LIU Xiao-dong;WANG Ying;HE Rong;DONG Xu-sheng;ZHONG Han-qing;LIU Yi-jian;ZHANG Li-ying;CHEN Chang-xin(School of Mechanical and Electronic Engineering,Shandong University of Science and Technology,Qingdao 266590,China;Key Lab.for Thin Film and Microfabrication of the Ministry of Education,National Key Lab.of Science and Technology on Micro/Nano Fabrication,Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]山东科技大学机械电子工程学院,山东青岛266590 [2]上海交通大学,电子信息与电气工程学院微纳电子学系,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海200240

出　　处：《新型炭材料》2018年第5期476-480,共5页New Carbon Materials

基　　金：上海市浦江人才计划(15PJ1403300);上海市“科技创新行动计划”国际合作项目(15520720200);国家自然科学基金(61177052);全国优秀博士学位论文作者专项资金(201154);教育部霍英东青年教师基金(131064)。

摘　　要：本文制备了一种基于局部化学掺杂的单壁碳纳米管(SWCNT) p-i-n结二极管。在此器件中,单根SWCNT沟道的两端分别被掺杂成p型和n型,沟道中段保留为本征状态,从而在SWCNT中形成具有较强内建电场的p-i-n结,表现出二极管特性。所制二极管器件具有高的器件性能,其整流比可达10~3数量级、反向饱和电流仅为23 p A。此外,简要探讨了该结构二极管的工作原理。Carbon nanotube p-n junction diodes are expected to be the building block of next generation integrated circuits.A p-i-n junction diode was prepared from a SWCNT with one end p-type doped,the other end n-type doped and the middle segment undoped.The p-type doping was performed using triethyloxonium hexachloroantimonate to form an air stable charge transfer complex(SWCNT+-SbCl 6-)while polyethylene imine was used as an electron donor for the n-type doping.The device showed an excellent performance with a high rectification ratio of 10 3 and a low reverse saturation current of 23 pA.

关 键 词：单壁碳纳米管 p-i-n结二极管 局部化学掺杂 整流特性 

分 类 号：TN65[电子电信—电路与系统]