不同厚度和退火温度下AZO/ZnO结构的薄膜稳定性  

Electrical stability of AZO/ZnO films of different thickness during annealing at different temperatures

作　　者：杜忠明[1,2,3] 刘向鑫 DU Zhong-ming;LIU Xiang-xin(The Key Laboratory of Solar Thermal and Photovoltaic System,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Physics and Mechanical&Engineering,Zunyi Normal College,Zunyi Guizhou 563002,China)

机构地区：[1]中国科学院电工研究所太阳能热利用和光伏系统重点实验室,北京100190 [2]中国科学院大学,北京100049 [3]遵义师范学院物理与机电工程学院,贵州遵义563002

出　　处：《电源技术》2018年第10期1563-1566,共4页Chinese Journal of Power Sources

基　　金："863"项目(2015AA050609);国家自然科学基金(61274060);中国科学院交叉创新团队资助项目

摘　　要：利用射频磁控溅射法在7059玻璃上生长不同厚度的AZO薄膜,并在不同厚度的薄膜上再利用射频磁控溅射沉积一层55 nm的本征ZnO薄膜。利用退火CdTe电池的退火条件退火各种厚度的薄膜时,所有AZO/ZnO结构的薄膜电阻率均只有微小的变化,表现出比单层结构的AZO薄膜更强的电学稳定性。在干空气气氛中400～550℃退火时,710 nm AZO/50 nm ZnO结构的薄膜仍然具有更好的稳定性,退火后电阻率仍然保持得更好。结果表明在制备CdTe电池时采用AZO/ZnO结构方式的透明电极比AZO更有利于电池的光电性能。AZO films of different thickness were sputtered on Corning 7059 glass slices with an RF magnetron sputtering system,after which ZnO films of 55 nm were deposited on with the same sputtering system.When annealed with configuration of annealing CdTe cells,the electrical properties of AZO/ZnO double layers maintained more stable than single-resistivity of all the AZO/ZnO films just increased slightly.When annealed at 400-550℃at dry air atmosphere,the 710 nm AZO/50 nm ZnO also maintained more stable than single AZO.The results show that adopting AZO/ZnO film as front contact is more benefit to the performance of CdTe cell.

关 键 词：射频磁控溅射 AZO/ZnO 电阻率 退火 

分 类 号：TM912[电气工程—电力电子与电力传动]