ICCD选通脉冲源的设计与实验研究  

Design and Experimental Study of ICCD Gated Pulse Source

作　　者：虎俊宇 裴承全 田进寿[1] 王俊锋[1] 方玉熳 温文龙[1] HU Jun-yu;PEI Cheng-quan;TIAN Jin-shou;WANG Jun-feng;FANG Yu-man;WEN Wen-long(Xi′an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi′an 710119,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院西安光学精密机械研究所超快诊断技术重点实验室,西安710119 [2]中国科学院大学,北京100049

出　　处：《光子学报》2018年第9期145-152,共8页Acta Photonica Sinica

基　　金：国家自然科学基金(No.41530422);中国科学院创新基金(No.CXJJ-16S015)~~

摘　　要：基于微处理器并结合模拟延迟电路以及数字逻辑电路,设计了分辨率可达5ns、最小脉宽为65ns、频率高达1MHz、且通过上位机可以远程控制的选通脉冲源.用该脉冲源结合选通电源测试了阴极上镀有金属导电基底和没有金属导电基底的ICCD的选通快门时间.结果表明当镀有金属基底时,ICCD具有更短的开启时间.建立相应的等效电路模型和阴极开关过程满足的RC等效方程,定性分析得出阴极面电阻的减小是使得ICCD开启时间缩短的主要因素.Based on the microprocessor and combined with analog delay circuit and digital logic circuit,a strobe pulse source with a resolution of 5 ns,a minimum pulse width of 65 ns,a frequency up to 1 MHz,and remote control by the host computer is designed.Using this pulse source in combination with a gate power supply,the gated shutter time of the ICCD coated with a metallic conductive substrate and no metallic conductive substrate on the cathode are tested.The results show that the ICCD has a shorter turn-on time when metal substrates are plated.The corresponding equivalent circuit model and the RC equivalent equation which the opening and closing process of photocathode met are established,qualitative analysis shows that the decrease in the cathode surface resistance is the main factor to shorten the ICCD open time.

关 键 词：ICCD 脉冲发生 脉冲整形 比较器 选通门宽 光阴极 

分 类 号：TN782[电子电信—电路与系统]