基于分立器件的SiC MOSFET功率模块门极驱动电路设计  

Design of gate driver circuit using discrete devices for SiC MOSFET power module

作　　者：王翰祥 蒋栋 WANG Han-xiang;JIANG Dong(School of Electrical and Electronic Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]华中科技大学电气与电子工程学院,湖北武汉430074

出　　处：《电工电能新技术》2018年第10期51-57,共7页Advanced Technology of Electrical Engineering and Energy

基　　金：国家重点研发计划项目(2016YFB01006024)

摘　　要：SiC MOSFET功率模块能够帮助提高变换器高温、高功率密度运行的可行性。同时,对于高温下可靠运行的驱动电路的需求也随之增加。由于Si技术的驱动芯片和隔离芯片的耐温最大不超过125℃,本研究提出了一种使用脉冲变压器配合基于Si材料的分立器件实现的隔离驱动电路,能够提供与商业化驱动电路同等的驱动电流与上升下降时间。所提出的分立器件驱动电路经Saber仿真验证,并于SiC功率模块上进行双脉冲实验评估。仿真和实验结果证明了所提出的驱动结构对SiC MOSFET驱动的效果。SiC MOSFET power modules can help to increase the feasibility of high power density,high temperature converters.At the same time,the demand for reliable gate drivers at high temperature increases.Due to the temperature limit of driver ICs and isolation ICs based on Si technology at 125℃,an isolated gate driver using a pulse transformer in combination with Si-based discrete devices has been proposed to provide the same drive ability,rise time and fall time as the commercial gate driver.The proposed discrete devices isolated gate driver has been verified by Saber.Also,double pulse test on SiC module has been used to do experimental verification.Both simulation and experimental results demonstrate the drive ability of the proposed gate drive on the SiC MOSFET power module.

关 键 词：门极驱动电路 脉冲变压器 分立器件 驱动能力 

分 类 号：TM402[电气工程—电器]