红光发射GaN∶Eu材料与器件研究进展  

Research Progress on Red Emitting GaN:Eu Materials and Devices

作　　者：王晓丹[1] 夏永禄 韩晶晶 毛红敏[1] WANG Xiao-dan;XIA Yong-lu;HAN Jing-jing;MAO Hong-min(Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Mathematics and Physics, Suzhou University of Science and Technology,Suzhou 215009,China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]苏州科技大学数理学院,江苏省微纳热流技术与能源应用重点实验室,苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123

出　　处：《人工晶体学报》2018年第10期2064-2069,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61306004,51002179);江苏省自然科学基金(BK20130263);江苏省十三五重点学科(20168765);苏州科技大学科研基金(XKZ201609)。

摘　　要：第三代宽禁带半导体材料氮化镓(GaN)以其优异的电学和光学性能受到了产业界和科研界的重视。稀土离子Eu掺杂GaN材料,既具备了稀土元素优异的光学性能,又充分发挥了半导体材料的优势,可用于制备新型红光LED器件。因此,对GaN:Eu材料的制备方法,发光机理及器件研究进展进行了总结,并对其未来发展趋势进行了展望。The third generation wide band gap semiconductor gallium nitride(GaN)has attracted the attention of industry and research society for its excellent electrical and optical properties.Rare earth Eu ions doped GaN materials not only possess the excellent optical properties of rare earth elements,but also give full play to the advantages of semiconductor materials.Therefore,it is promising for preparing red light LEDs.The preparation methods,luminescent mechanism and device progress of GaN∶Eu materials are introduced,and its future development trend is prospected.

关 键 词：GaN∶Eu 材料制备 发光机理 器件 

分 类 号：TN304[电子电信—物理电子学]