氮气氛退火直拉硅中缺陷的低温红外光谱分析  

Study the Defects in Czochralski Silicon after Annealing in Nitrogen Atmosphere by Low Temperature Fourier Transform Infrared Absorption Spectrometer

作　　者：刘丽丽[1] 孙士帅 张颖涛[1] 李洪涛 LIU Lili;SUN Shishuai;ZHANG Yingtao;LI Hongtao(College of Science,Tianjin University of Technology,Tianjin 300384,China;China Institute of Atomic Energy,Beijing 102413,China)

机构地区：[1]天津理工大学理学院,天津300384 [2]中国原子能研究院,北京102413

出　　处：《实验室研究与探索》2018年第10期31-33,共3页Research and Exploration In Laboratory

基　　金：国家自然科学基金项目(0472034);河北省自然科学基金项目(E2005000048)

摘　　要：将直拉硅、微氮直拉硅样品在氮气氛保护下1 100℃退火8 h,以引入氮杂质。利用低温红外技术(20 K)获得样品的精细光谱。试验发现,在2 850、2 920cm^(-1)处出现2个吸收峰,吸收峰强度随样品中氧、氮含量的升高而升高,且快中子辐照样品中的强度强于未经快中子辐照样品。由此可以断定,这2个吸收峰强度与样品中氮、氧含量及辐照引入的空位缺陷有关,其所对应的缺陷组分可能为N_2V_2O_n。Nitrogen is an important impurity in Czochralski silicon(CZ-Si).In order to introduce nitrogen,CZ-Si,nitrogen-doped Czochralski silicon(NCZ-Si)were annealed in nitrogen atmosphere at 1100℃for 8h,Fourier Transform Infrared Absorption Spectrometer(FTIR)was used to detect the infrared absorption spectrum.Two new defects related to absorption peaks located at 2 850 cm-1 and 2 920 cm-1 were found.Their densities increased with the increasing of oxygen and nitrogen concentration,and density in fast neutron irradiated was larger than that in non-irradiated.So,it can be concluded that the two absorption peaks are related to nitrogen,oxygen concentration and fast neutron irradiation.The defect's constituents may be N2V2O n,its precise constituents will be studied in the future.

关 键 词：直拉硅 快中子辐照 氮气氛退火 红外光谱 缺陷 

分 类 号：TN304.1[电子电信—物理电子学]