基于RTD的新型D锁存器设计  

A novel D-latch design based on RTD

作　　者：姚茂群[1] 冯杰 沈珊瑚[1] YAO Maoqun;FENG Jie;SHEN Shanhu(Hangzhou Institute of Service Engineering,Hangzhou Normal University,Hangzhou 311121,China)

机构地区：[1]杭州师范大学国际服务工程学院,浙江杭州311121

出　　处：《浙江大学学报（理学版）》2018年第6期728-732,共5页Journal of Zhejiang University（Science Edition）

基　　金：国家自然科学基金资助项目(61771179;61271124);浙江省自然科学基金资助项目(LY15F010011)

摘　　要：共振隧穿二极管(RTD)作为一种较成熟的量子器件,具有独特的负内阻特性,由RTD组成的单双稳态转换逻辑单元(MOBILE)能够很好地利用该特性进行数字电路设计.基于MOBILE,设计了一种新的RTD输出控制电路.该电路的优点是将RTD的正向和反向电流电压特性相结合,无须使用面积较大的三端器件,电路设计较便捷.采用RTD输出控制电路和HEMT器件,设计了一种新的D锁存器.该D锁存器采用高电平偏置电压,不仅可使MOBILE获得需要的高电平触发方式,而且电路具有自锁特性.HSPICE仿真实验证明,该D锁存器不仅电路结构简单,而且功耗低、速度快.The resonant tunneling diode(RTD)as a relatively mature quantum device,has a unique characteristic of negative differential resistance.Naturally,the monostable-bistable transition logic element(MOBILE)composed of RTDs can make good use of this characteristic for digital circuit design.This paper presents a new RTD control-output method with MOBILE.The advantage of this method is that the forward and reverse current voltage characteristics of RTD are combined,therefore,the three-terminal devices with large area could be avoided and the circuit design becomes convenient.With the RTD control-output method and a HEMT device,a novel D-latch was designed.The D-latch has a high level of bias voltage,which not only enables the high-level trigger mode of the MOBILE,but also possesses the characteristic of self-locking.The HSPICE simulation and analysis show that the D-latch has low-power consumption and fast-working speed,meanwhile it has a very simple circuit structure.

关 键 词：RTD MOBILE RTD控制输出方式 D锁存器 

分 类 号：TN432[电子电信—微电子学与固体电子学]