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作 者:靳全伟[1,2,3] 庞毓 蒋建锋[1,2] 谭亮[2] 崔玲玲 魏彬[1,2] 万敏[1,2] 高清松[1,2] 唐淳[1,2] Jin Quanwei;Pang Yu;Jiang Jianfeng;Tan Liang;Cui Lingling;Wei Bing;Wan Min;Gao Qingsong;Tang Chun(Institute of Applied Electronics,Chinese Academy of Engineering Physics,Mianyang 621999,China;Key Laboratory of Science and Technology on High Energy Laser,Chinese Academy of Engineering Physics,Mianyang 621999,China;Postgraduate Department,Chinese Academy of Engineering Physics,Beijing 100088,China)
机构地区:[1]中国工程物理研究院应用电子学研究所,四川绵阳621999 [2]中国工程物理研究院高能激光科学与技术重点实验室,四川绵阳621999 [3]中国工程物理研究院北京研究生部,北京100088
出 处:《红外与激光工程》2018年第11期109-113,共5页Infrared and Laser Engineering
基 金:国家自然科学基金(61705208)
摘 要:研制的双波长短脉冲激光器采用"大模体积腔+渐变反射率输出镜"技术,对二极管泵浦棒状激光介质产生的热透镜及热退偏进行补偿,在500 Hz下实现了谐振腔短脉冲能量140 mJ,脉宽约17.76 ns的1 064 nm激光输出,20 min能量不稳定性RMS值小于0.3%,激光光束质量M2≈1.6。该实验结果与采用MOPA技术路线——谐振腔+预放的方式技术指标相当,但采用谐振腔的技术路线结构简单紧凑。采用水热法生长抗灰迹效应的GTR-KTP晶体作为倍频晶体,相位匹配方式选择Ⅱ类相位匹配,倍频后532 nm激光单脉冲最高能量96 mJ,最高倍频效率68.6%,激光光束质量M2≈2.1。通过能量调节设计,实现了线偏振态1 064 nm和532 nm激光功率连续可调共光轴输出。The double wavelenghs short pulse laser was developed with the high mode volume and variable reflectivity mirror(VRM).The thermal lens and the thermal birefringence produced by diode-lasers pumped rod laser medium was compensated,which presented a short-pulse energy of 140 mJ and 1 064 nm laser output with a pulse width of 17.76 ns at a repetition rate of 500 Hz.The beam quality value was M2≈1.6,and the energy instability(RMS)value of 20 minutes was less than 0.3%.The result of resonatorwas corresponded with Master Oscillator Power-Amplifier(MOPA)technology,but it was close and neat.The maximum laser energy of 96 mJ at 532 nm was demonstrated by extra-cavity second-harmonic generation(SHG)with type-II angle phase-matched GTR-KTP crystal,the KTP crystals with resistance to grey trace effect was grown by hydrothermal method.The maximum efficiency of SHG was 68.6%,and the beam quality value was M2≈2.1.The 1 064 nm and 532 nm laser were output at same axis with energy regulation.
关 键 词:高光束质量 渐变反射率输出镜 高倍频效率 双波长 能量可调
分 类 号:TN248.1[电子电信—物理电子学]
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