退火温度对铁酸铋薄膜阻变特性的影响  

Annealing Temperature Effect on Resistive Switching in BiFeO_3 Thin Film

作　　者：罗劲明[1] LUO Jin-ming(School of Physics and Optical Information Sciences,Jiaying University,Meizhou 514015,China)

机构地区：[1]嘉应学院物理与光信息科技学院,梅州514015

出　　处：《科学技术与工程》2018年第33期122-125,共4页Science Technology and Engineering

基　　金：广东省自然科学基金博士科研启动项目(2014A030310410);嘉应学院省市共建项目建设专项经费资助

摘　　要：在氧化铟锡衬底上利用溶胶凝胶法,分别在500℃和600℃退火条件下,制备了锰掺杂的铁酸铋薄膜。两种退火温度下制备出来的薄膜均具有典型的钙钛矿晶体结构,但高温退火的薄膜晶粒尺寸要比低温退火的薄膜大。此外,随着退火温度的升高,薄膜的介电常数增大,漏电流也随之增加。通过测量约120个电流电压循环曲线,研究了这两种退火温度下锰掺杂铁酸铋薄膜的阻变效应,发现高温退火下薄膜的阻变性能稳定性要比低温退火的薄膜好。最后,基于氧空位相关的导电丝理论,进一步讨论分析了退火温度对薄膜介电、漏电性能和阻变特性的影响。Mn-doped BiFeO 3 thin films were prepared on the ITO substrates by sol-gel method at 500℃and 600℃,respectively.Both of the films demonstrate typical perovskite crystal structure,while the grain size of thin film annealed at high temperature is larger than that annealed at low temperature.In addition,with the increase of annealing temperature,both of the dielectric constant and the leakage current increase.By measuring the current-voltage curves with about 120 cycles in Mn-doped BiFeO 3 thin films,the resistive switching of thin films annealed at different temperatures has been studied,which can be found that the stability of resistive switching in the thin film annealed at high temperature is better than that annealed at low temperature.Finally,based on the conductive filament theory with oxygen vacancies,the effect of annealing temperature on the properties of dielectric,leakage current,as well as resistive switching in Mn-doped BiFeO 3 thin films has been discussed.

关 键 词：铁酸铋 阻变 退火温度 

分 类 号：O484.42[理学—固体物理]