氧化镁层对石墨烯/硅太阳能电池的界面优化  

Interface Engineering of Graphene/silicon Solar Cells by Introducing an Ultrathin Magnesium Oxide Interlayer

作　　者：赵建江[1] 徐明生[2] ZHAO Jian-jiang;XU Ming-sheng(State Key Lab of Silicon Materials,School of Material Science and Engineering, Zhejiang University,Hangzhou 310027,China;State Key Lab of Silicon Materials,College of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学材料科学与工程学院硅材料国家重点实验室,杭州310027 [2]浙江大学信息与电子工程学院硅材料国家重点实验室,杭州310027

出　　处：《光子学报》2018年第12期58-64,共7页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.51472219;51672244);国家国际合作专项(No.2013DFG52800)资助~~

摘　　要：为了探究石墨烯/硅太阳能电池的铝/硅背接触特性,采用连续蒸镀的方法在铝/硅背接触间插入一层氧化镁介质层,对比测试具有不同厚度氧化镁层的电池的电流-电压特性、外量子效应、电池的串联电阻以及背接触电阻。研究表明:随着氧化镁厚度的增加,电池的光电转换效率、串联电阻以及背接触电阻存在先增大后降低的趋势,当氧化镁的厚度为1nm时的光电转化效率最优,达到5.53%,厚度为0nm时,光电转换效率为2.90%;当氧化镁的厚度为0nm和1nm时,相应的串联电阻(背接触电阻)分别为4.1Ω(9.6Ω)和1.8Ω(3.2Ω).In order to investigate the characteristics of the back-side surface,i.e.,Al/Si,of graphene/Si solar cells,a ultra-thin magnesium oxide interlayer with various thickness between the Al electrode and the silicon substrate was prepared by using a successive thermal evaporation deposition technology.The current-voltage curves,external quantum efficiency,series resistance,and back contact resistance of the graphene/Si solar cells with different thickness of the magnesium oxide interlayer were measured.The results show that the photoelectric conversion efficiency,series resistance and back contact resistance increased first and then decreased with the increase in the magnesium oxide thickness,and the device performance is best when the thickness of magnesium oxide layer is 1 nm.The photoelectric conversion efficiency,series resistance and back contact resistance of the solar cells with 0 nm and 1 nm MgO are 2.90%,4.2Ω,9.6Ω,and 5.53%,1.8Ω,3.2Ω.

关 键 词：石墨烯 硅 太阳能电池 界面优化 氧化镁 

分 类 号：TK513[动力工程及工程热物理—热能工程]