高效四结砷化镓太阳电池设计与在轨性能分析  

Design and analysis of in-orbit performance of high efficiency quadruple-junction GaAs solar array

作　　者：张晓鹏[1] 庄海孝[1] 曹燕[2] 左苗 张香燕[1] 王巍巍[1] 周进锋 ZHANG Xiaopeng;ZHUANG Haixiao;CAO Yan;ZUO Miao;ZHANG Xiangyan;WANG Weiwei;ZHOU Jinfeng(Beijing Institute of Space System Engineering;Beijing Institute of Spacecraft Environment Engineering;Beijing Spacecrafts: Beijing 100094, China)

机构地区：[1]北京空间飞行器总体设计部 [2]北京卫星环境工程研究所 [3]北京卫星制造厂有限公司,北京100094

出　　处：《航天器环境工程》2018年第6期535-540,共6页Spacecraft Environment Engineering

基　　金：国家国防科工局民用航天预研基金项目(编号:D040202)

摘　　要：对一种新型反向生长工艺四结砷化镓太阳电池(IMM四结电池)开展了设计和在轨性能试验分析。该电池所用半导体材料的禁带宽度分别为1.9、1.4、1.0、0.7 eV,材料特性的变化改善了4个P-N结与AM0太阳光谱的匹配关系。文章介绍了该电池在提高光电转换效率方面的结构和工艺设计,通过实施在轨真实应用环境试验,全面系统获取四结砷化镓太阳电池在轨运行期间的遥测数据并进行分析处理,结果显示电池开路电压3.321 V,短路电流密度15.76 mA/cm2,实际在轨转换效率在34.44%～34.79%之间,各项关键性能指标相较于三结砷化镓太阳电池有大幅度提高。A kind of quadruple-junction GaAs solar array(IMM quadruple-junction array)is proposed and tested.The bandwidths of the semi-conductive materials used in the array are1.9,1.4,1.0,and0.7eV,respectively.The photoelectric conversion efficiency of the IMM quadruple-junction array can be greatly improved as compared with the three-junction gallium arsenide solar arrays.The matching between four P-N junctions and the AM0solar spectra is ameliorated due to the specific physical characteristics of the material.The structure and the process design of the battery are presented with the aim to improve the photovoltaic efficiency.The typical electrical performance data of the solar array are acquired via the telemetric system.It is shown that the performance of the IMM quadruple-junction array,as featured by the open-circuit voltage of3.321V,the short-circuit current density of15.76mA/cm2,and the practical photovoltaic efficiency ranging between34.44%and34.79%,is much better than that of the conventional three-junction array.

关 键 词：四结砷化镓太阳电池 电性能 光电转换效率 在轨实验 遥测参数 

分 类 号：TK514[动力工程及工程热物理—热能工程] V448[航空宇航科学与技术—飞行器设计]