带隙基准源单粒子敏感性分析  

Single event sensitivity analysis of bandgap reference

作　　者：隋成龙 韩旭鹏 王亮 刘家齐 李同德 曹炜亦 赵元富 Sui Chenglong;Han Xupeng;Wang Liang;Liu Jiaqi;Li Tongde;Cao Weiyi;Zhao Yuanfu(Beijging Microelectronics Technology Institute,Beijing 100076,China)

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《电子技术应用》2018年第12期5-8,共4页Application of Electronic Technique

摘　　要：基于一款0.18μm工艺下常规设计带隙基准源,使用单粒子瞬态脉冲电流模型分析了常见CMOS两级放大器的单粒子敏感性。对于带隙基准源中使用的垂直型PNP管使用TCAD软件建立了三维模型,并通过仿真验证了其应用在带隙基准源中的单粒子敏感性。最后,针对带隙基准源单粒子敏感特性,提出了整体加固建议。Based on the conventional design of bandgap reference using0.18μm process,the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers.The vertical type PNP transistor used in the bandgap reference was modeled using TCAD software,and its single event sensitivity in the bandgap reference source was verified by simulation.In the end,the radiation hardened bandgap reference was proposed.

关 键 词：单粒子瞬态 带隙基准源 垂直型PNP管 

分 类 号：TN406[电子电信—微电子学与固体电子学]