超声振动辅助固结磨粒抛光硅片表面形貌及粗糙度研究  

Investigation of silicon wafer surface morphology and roughness processed by fixed abrasive polishing with assistance of ultrasonic vibration

作　　者：付鹏[1] 杨卫平[1] 吴勇波 FU Peng;YANG Weiping;WU Yongbo(College of Engineering,Jiangxi Agricultural University,Nanchang330045,China;Department of Machine Intelligence and Systems Engineering,Akita Prefectural University,Akita015-0055,Japan)

机构地区：[1]江西农业大学工学院,南昌330045 [2]日本秋田县立大学系统科学技术学部

出　　处：《振动与冲击》2018年第24期237-243,共7页Journal of Vibration and Shock

基　　金：国家自然科学基金(51065011);国家留学基金委"地方合作项目"(201208360113)

摘　　要：高面型精度和高表面质量的硅片表面加工是目前研究的难点和热点问题之一,基于超声加工所具有的加工效率和加工表面质量高的特性,以及固结磨粒的加工质量易控制和对环境污染小的特点,开展超声椭圆振动辅助固结磨粒抛光硅片的材料去除、抛光表面面型精度及粗糙度的加工机理及实验研究。研究认为抛光工具运动轨迹是影响上述问题的主要因素,为此在对抛光实验系统描述基础上,分析并建立了抛光工具运动轨迹及轨迹密度模型,进而完成硅片材料去除,抛光表面形貌和表面粗糙度的建模仿真。开展相应的实验研究,发现理论分析与实验的结果相一致,基于抛光工具运动轨迹建模的可行性。该研究方法和得出结论为今后开展固结磨粒抛光硅片表面实验的工艺参数的选择和优化,提供了可供借鉴的研究成果,为实际生产提供了可供参考的理论依据。Based on the high efficiency and surface quality of ultrasonic machining characteristics,and combined with high effectively controlling and little pollution features of fixed abrasive polishing,this work is to explore the process mechanism of the ultrasonic elliptic vibration assisted fixed abrasive chemical mechanical polishing(CMP)technique on material removal,super smooth surface and surface roughness of silicon wafer.It is considered that the path of polishing tool is the main factor to influence the material removal and surface polishing quality.Therefore,according to the experimental system,a mathematical model of polishing tool path and path density was proposed,and then the simulation models of materials removal,surface morphology and surface roughness were built.Furthermore,the experiment was launched.The present study could provide fruitful suggestion for selecting process parameters of fixed abrasive CMP technique for silicon wafer,and theoretical basis for industrial application and future experimental studies.

关 键 词：超声振动 固结磨粒 抛光轨迹 加工机理 

分 类 号：TH16[机械工程—机械制造及自动化]