原位As掺杂p型碲镉汞薄膜的制备研究  

Preparation study of p-type As doped HgCdTe material

作　　者：宋淑芳[1] 田震[1] SONG Shu-fang;TIAN Zhen(North China Research Institute of Electro-Optics,Beijing100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2018年第12期1500-1502,共3页Laser & Infrared

摘　　要：非本征p型掺杂碲镉汞材料可以有效克服少子寿命偏低等问题,提高长波和甚长波红外焦平面器件的性能。本文重点阐述了As掺杂实现p型掺杂的基础性原理,以及其制备方法,为p-on-n碲镉汞材料器件研究提供依据。The extrinsic p-type doped HgCdTe material has the high minority carrier lifetime and can effectively im-prove device performance of long wave infrared or very long wave infrared HgCdTe detector.In this paper,the theory of p-type HgCdTe by As atom doping is reviewed.Also a preparation study of As doping p-type HgCdTe is given,which will be the basis for research about p-on-n HgCdTe materials and devices.

关 键 词：P型 HGCDTE As掺杂 

分 类 号：TN213[电子电信—物理电子学]