交流电腐蚀方法制备STM探针  

Preparation of STM Probes by AC Electrochemical-Etching Method

作　　者：朱阁悠 臧侃[1] ZHU Geyou;ZANG Kan(School of Mechanical Engineering,Dalian Jiaotong University,Dalian 116028,China)

机构地区：[1]大连交通大学机械工程学院,辽宁大连116028

出　　处：《大连交通大学学报》2018年第6期76-81,共6页Journal of Dalian Jiaotong University

基　　金：国家自然科学基金资助项目(5120701651477023)

摘　　要：采用交流电化学腐蚀法来制备扫描隧道显微镜(Scanning Tunneling Microscope,简称STM)所需要的钨(W)材料针尖,代替了传统的直流断落法,首先细致研究了电压、浸入深度、频率、反相电压、溶液浓度等参数对探针制备成功率的影响,其次根据实验结果确定了最佳参数值,在显微镜下观察了W针尖的形成过程,并且对实验制备的针尖进行优化处理,W针尖在STM下扫描Si(111)-7×7重构表面获得了原子分辨图像,该方法为针尖的制备提供了一条新的思路.Tungsten tips required for scanning tunneling microscopes(STM)are prepared by alternating current(AC)electrochemical etching.This method replaces the traditional DC-drop method.Firstly,the effects of etching parameters on the success rate of probe preparation were studied such as voltage,immersion depth,frequency,reversed voltage and solution concentration.Secondly,the optimized parameter values were determined according to the experiment results,and the formation of the tungsten tip was observed under the microscope.The tungsten tips were optimized.Finally,atomic resolution image was obtained by scanning Si(111)-7×7reconstructed surfaces with W tip at STM.This method provides a new approach for the preparation of the needle tip.

关 键 词：交流电化学腐蚀法 W针尖 扫描隧道显微镜 

分 类 号：TH742[机械工程—光学工程]