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作 者:唐进迎 雷武虎 任晓东[1,2] 张坤 张明鑫[1,2] Tang Jinying;Lei Wuhu;Ren Xiaodong;Zhang Kun;Zhang Mingxin(College of Electronic Engineering,National University of Defense Technology,Hefei 230037,China;State Key Laboratory of Pulsed Power Laser Technology,Hefei 230037,China;Anhui Province Key Laboratory of Electronic Restriction,Hefei 230037,China)
机构地区:[1]国防科技大学电子对抗学院,安徽合肥230037 [2]脉冲功率激光技术国家重点实验室,安徽合肥230037 [3]电子制约技术安徽省重点实验室,安徽合肥230037
出 处:《红外与激光工程》2018年第12期303-310,共8页Infrared and Laser Engineering
基 金:国家重点实验室2017年度主任基金项目(SKL2017ZR02)
摘 要:卫星的温度变化直接影响着电子器件的工作性能,为了研究辐冷板的温升效应对电子器件温度的影响,通过分析辐冷板的散热机理和辐冷板工作特性,采用有限元分析软件,对简化后的辐冷板模型进行了激光辐照热效应计算分析。以脉冲激光作为辐射源,对辐冷板进行照射,通过对其表面温度场进行数值模拟,得到了在脉冲激光照射下的瞬态温度场分布,并对模拟结果进行了分析和研究。发现电子器件在没有散热的情况下温度将升高64.5 K,在最大工作状态时激光的照射将严重影响热管的工作性能,而且热管的非正常工作将使电子器件温度升高,影响电子器件正常运行,为星上温度影响电子器件性能实验奠定了理论基础。The change of temperature in satellite have a direct influence on the performance of electrical devices.Aiming at studying the performance of electrical devices due to temperature distribution of radiant plate,the mechanism of temperature dissipation of the radiant plate was analyzed based on its characteristics.The research on thermal effect of laser irradiation in a simplified model of radiant plate was done by using the finite element analysis software.The transient temperature distribution under pulsed laser radiation was got by numerical simulation of the surface temperature field.The pulsed laser was used as the radiation source to irradiate the radiant plate,based on analysis and study of the simulation results,it was founded that the temperature of the electronic device would rise by64.5K when there was no heat dissipation around the electrical devices.When the heat pipe radiator was in the maximum working performance,the thermal effect of pulsed laser irradiation would seriously affect the heat dissipation performance of the heat pipe,the abnormal work of the heat pipe would increase the temperature of the electronic device and affected the normal operation of the electronic devices.It lays a theoretical foundation for the influence of the temperature on the performance of electronic devices.
分 类 号:O551[理学—热学与物质分子运动论]
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