低温度系数高电源抑制比宽频带带隙基准电压源的设计  

Design of a Bandgap Reference with Low Temperature Coefficient High PSRR and Wide Band

作　　者：连天培 蒋品群[1] 宋树祥[1] 蔡超波 庞中秋 LIAN Tianpei;JIANG Pinqun;SONG Shuxiang;CAI Chaobo;PANG Zhongqiu(College of Electronic Engineering,Guangxi Normal University,Guilin Guangxi 541004,China)

机构地区：[1]广西师范大学电子工程学院,广西桂林541004

出　　处：《广西师范大学学报（自然科学版）》2019年第1期125-132,共8页Journal of Guangxi Normal University:Natural Science Edition

基　　金：国家自然科学基金(61361011);广西高等学校优秀中青年骨干教师培养工程(GXQG022014002);广西自然科学基金(2017GXNSFAA198363)

摘　　要：本文设计了一款低温度系数高电源抑制比的带隙基准电压源。设计采用动态阈值MOS管(DTMOS)产生温度补偿电流,以降低温漂;输出部分采用一个简单的低通滤波器,以降低高频噪声,在较宽频带内提高电源抑制比。电路采用SMIC 0.18μm标准CMOS工艺实现,供电电源为1.8V,仿真结果表明:电路在-40～130℃温度范围内,温度系数为1.54×10-6℃-1,输出基准电压为1.154V,电源抑制比在10Hz处为-76dB,在100kHz处为-85dB,在15 MHz处为-63dB。本基准源具有较好的综合性能,可为数模转换电路、模数转换电路、电源管理芯片等提供高精度的基准电压,具有较大的应用价值。A low temperature coefficient and high PSRR bandgap reference is presented in this paper.To temperature drift,a dynamic threshold MOS transistor is used to provide compensation current.A compact low-pass filter is introduced,the noise at high frequencies is reduced,and then a high PSRR over a wide frequency range is achieved.The proposed reference is implemented in SMIC 0.18μm CMOS process.The simulation results show that the temperature coefficient is 1.54×10^-6℃^-1,and an output reference voltage is1.154V for temperatures from -40℃ to 130℃ with supply voltage1.8V.The PSRR is-76dB at 10Hz,-85dB at 100kHz,and -63dB at 15MHz.The reference source has good comprehensive performance,which can provide high-precision reference voltage for digital-to-analog conversion circuit,analog-to-digital conversion circuit and power management chip,and has great application value.

关 键 词：带隙基准电压源 电源抑制比 温度系数 动态阈值MOS管 

分 类 号：TN432[电子电信—微电子学与固体电子学]