提高GaN基发光二极管光提取效率技术  

Research on improving light extraction efficiency for GaN-based light emitting diodes

作　　者：张连俊[1] 刘刚[1] 张萌 ZHANG Lianjun;LIU Gang;ZHANG Men(School of Computer Science and Technology,Shandong University of Technology,Zibo 255049,China;Department of Electrical and Computer Engineering,University of Illinois,Urbana-Champaign 61801,USA)

机构地区：[1]山东理工大学计算机科学与技术学院,山东淄博255049 [2]伊利诺伊大学电子与计算机工程系,伊利诺伊厄本那香槟61801

出　　处：《山东理工大学学报（自然科学版）》2019年第2期61-64,共4页Journal of Shandong University of Technology:Natural Science Edition

摘　　要：基于氮化物GaN的发光二极管为全彩色发光二极管显示屏和白光光源提供了新机遇。由于全内反射引起的低光提取效率,在分析了现有的提高光提取效率技术的基础上,采用在GaN基和图形化蓝宝石衬底上嵌入气隙光子晶体,减少线程错位,实验结果显示该方法明显提高了LED光提取效率。Nitride based light-emitting diodes have opened up opportunities for full color LED display and white color lighting source.Many researches are ongoing to overcome the low light extraction efficiency caused by the total internal reflection.The state-of-art techniques used to improve the light extraction efficiency is reviewed,and a new design combining both embedded air-gap photonic crystals to extract most guided light in GaN and patterned sapphire substrate to reduce the threading dislocations is proposed.The experimental results show that the method obviously improved light extraction efficiency for LED.

关 键 词：发光二极管 光提取效率 光子晶体 外延侧生长 

分 类 号：TN312.8[电子电信—物理电子学]