高压辅助法制备红外非线性AgGaGe5Se(12)、AgGaGeS4晶体  

High-Presure-Assisted Preparation of Infrared Nonlinear Crystal AgGaGe_5Se_(12) and AgGaGeS_4

作　　者：马佳仁 黄昌保[1] 倪友保[1] 吴海信[1] 王振友[1] MA Jia-ren;HUANG Chang-bao;NI You-bao;WU Hai-xin;WANG Zhen-you(Anhui Provincial Key Laboratory of Photonic Devices and Materials,Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences,Hefei 230031, China;University of Science and Technology of China,Hefei 230026,China)

机构地区：[1]中国科学院合肥物质科学研究院,安徽光学精密机械研究所,安徽省光子器件与材料重点实验室,合肥230031 [2]中国科学技术大学,合肥230026

出　　处：《人工晶体学报》2018年第12期2423-2428,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51702323);国防科技创新特区项目支持.

摘　　要：AgGaGe_5Se_(12)、AgGaGeS_4非线性晶体在中远红外激光具有良好的应用前景。合成高纯多晶是制备可器件化单晶元件的关键。但S、Se易挥发、高温下饱和蒸气压高,易导致石英坩埚的爆炸,组分偏离化学计量比。为此,本文采用一种新型的高压辅助法合成出大尺寸高纯的多晶原料,解决了石英坩埚爆炸和组份偏离问题,并在此基础上进行了单晶的生长过程。多晶X射线粉末衍射测试结果与模拟图谱或者标准PDF卡片一致; X射线荧光光谱分析得到各元素百分含量非常接近化学计量比,AgGaGe_5Se_(12)中Ag、Ga、Ge、Se各占7. 86%、5. 08%、23. 80%、63. 26%,AgGaGeS_4中Ag、Ga、Ge、S各占28. 22%、18. 24%、19. 52%、34. 02%;单晶透过率测试得到AgGaGe_5Se_(12)、AgGaGeS_4透过率分别为60%、70%,证明此方法制备的AgGaGe_5Se_(12)、AgGaGeS_4晶体性能优良,展现了该方法在多晶合成的应用潜力。AgGaGe5Se12 and AgGaGeS4 are the promising nonlinear crystals for mid-far infrared laser applications. The synthesis of high purity polycrystals is the key to the fabrication of single crystal devices. However, the volatile S and Se have high saturated vapor pressure at high temperature, which easily causes the explosion of quartz crucible and the component deviates from stoichiometric ratio. Large size and high purity polycrystalline were synthesized by high-pressure-assisted method, which solves the problem of quartz crucible explosion and component deviation. Meanwhile, the single crystal rods are grown. The results of XRD are consistent with the simulated or standard PDF card. XRF shows that the percentage of each element was very close to stoichiometry. Ag, Ga, Ge and Se is 7.86%, 5.08%, 23.80% and 63.26% in AgGaGe5Se12 , Ag, Ga, Ge and S is 28.22%, 18.24%, 19.52% and 34.02% in AgGaGeS4.FTIR shows the transmission rates of AgGaGe5Se12 and AgGaGeS4 are 60% and 70% respectively. The results show that the crystals prepared by this method are excellent and this method has application potential in polycrystalline synthesis.

关 键 词：AgGaGe5Se12 AgGaGeS4 中远红外激光 高压辅助法 

分 类 号：O73[理学—晶体学]