FPGA大气中子辐射效应仿真研究  

Simulation of Atmospheric Neutron Radiation Effect in FPGA

作　　者：赵鹏[1] 梅亮[1] 常成[1] ZHAO Peng;MEI Liang;CHANG Cheng(Aerospace Science & Industry Corporation Defense Technology R&T Center,Beijing 100854)

机构地区：[1]航天科工防御技术研究试验中心,北京100854

出　　处：《计算机与数字工程》2019年第1期74-78,共5页Computer & Digital Engineering

摘　　要：论文开展FPGA大气中子辐射效应仿真研究,通过分析FPGA尤其是SRAM型FPGA在临近空间内的运行环境,发现其容易受到临近空间中大气中子的辐射影响,发生单粒子翻转。造成这一现象的主要原因在于,SRAM型FPGA内部存储单元中的NMOS管受大气中子辐射影响,其漏极产生瞬态电流脉冲,进而影响整个FPGA的功能。《NMOS大气中子辐射效应研究》通过TCAD仿真软件,得出不同能量大气中子以及不同尺寸NMOS管等情况下,NMOS管漏极产生的漏极瞬态脉冲电流,论文利用该仿真结果,进行SRAM存储单元的电路仿真分析,得出FPGA受大气中子辐射发生单粒子翻转主要影响因素。In this paper,FPGA atmospheric neutron radiation effect simulation research is studied.Through the analysis of FPGA,especially SRAM-type FPGA in the space near the operating environment,it can be found that it is susceptible to atmospheric neutron radiation in the adjacent space,then the occurrence of single-particle flip will happen.The main reason for this phenomenon is that the NMOS transistor in the internal memory cell of the SRAM type FPGA is affected by atmospheric neutron radiation,and its drain generates transient current pulse,which affects the function of the whole FPGA."NMOS Atmospheric Neutron Radiation Effect Study"The TCAD simulation software is used to obtain the drain transient current generated by the NMOS tube drain in different energy neutrons and different sizes of NMOS tubes.Based on the simulation results,the SRAM memory cell circuit analysis is carried out in this oaper and the main influencing factors of FPGA single particle turnover caused by atmospheric neutron radiation are obtained.

关 键 词：FPGA SRAM 电路仿真 

分 类 号：TN40[电子电信—微电子学与固体电子学]