CuO掺杂对钇钡铜氧陶瓷电性能的影响  

Effect of CuO Doping on Electrical Properties of YBCO Ceramics

作　　者：周宏明[1,2] 王博益 李荐 程名辉[1] ZHOU Hongming;WANG Boyi;LI Jian;CHENG Minghui(School of Materials Science and Engineering,Central South University,Changsha 410083;Hunan Zhengyuan Institute for Energy Storage Materials and Devices,Changsha 410083)

机构地区：[1]中南大学材料科学与工程学院,长沙410083 [2]湖南省正源储能材料与器件研究所,长沙410083

出　　处：《材料导报》2019年第2期220-224,共5页Materials Reports

基　　金：清远市科技计划项目(2015D009);清远市清城区科技计划项目(2015B04)~~

摘　　要：采用传统固相烧结法制备的Y_1Ba_2Cu_3O_(7-x)(YBCO)陶瓷为功能相、玻璃粉为烧结助剂、CuO为掺杂剂,制备了CuO掺杂的钇钡铜氧陶瓷。通过X射线衍射仪、扫描电镜、能谱分析仪、微欧仪和高低温交变湿热试验箱对其相组成、微观结构及电性能进行研究。研究结果表明:CuO掺杂有利于减少YBCO晶体结构中存在的氧缺陷;随CuO掺杂量从0%增加到3%,陶瓷致密度逐渐增加,电阻率明显降低; CuO掺杂量大于3%后,陶瓷致密度逐渐下降,电阻率也明显升高;随CuO掺杂量增加,陶瓷的电阻温度系数逐渐由负向正偏移,电阻温度系数值逐渐减小。当CuO掺杂量为3%时,样品的综合电性能最佳:电阻率为1. 55×10^(-4)Ω·m,电阻温度系数为-1 470×10^(-6)/℃。Based on traditional solid-phase sintering method,three elements,Y1Ba2Cu3O7-x(YBCO)ceramics as functional phase,glass powder as sintering aids and copper(Ⅱ)oxide(CuO)doping as dopant,can be made into the product-the CuO doped YBCO ceramics.Its microstructure,phase composition and electrical properties have been studied by SEM,XRD,EDS,micro ohm instrument and high temperature alternating humidity test chamber.The study has found that doping CuO can reduce the oxygen defects in the crystal structure of YBCO;as the CuO content increases from 0%to 3%,the ceramic density increases gradually while the resistivity decreases obviously;as the content of CuO is more than 3%,the ceramic density decreases gradually while the resistivity increases obviously;with the increase of CuO content,temperature coefficient of resistance(TCR)shifts from negative to positive gradually,and the TCR is becoming smaller and smaller;when the doping amount of CuO is 3%,the sample has the best comprehensive electrical properties-the resistivity is 1.55×10^-4Ω·m and the resistance temperature coefficient is-1 470×10^-6/℃.

关 键 词：钇钡铜氧陶瓷 氧化铜掺杂 致密度 电阻率 电阻温度系数 

分 类 号：TM283[一般工业技术—材料科学与工程]