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作 者:孙宇琪 端木庆铎[1] SUN Yu-qi;DUANMU Qing-duo(College of Science,Changchun University of Science and Technology,Changhun Jilin 130012,China)
出 处:《长春师范大学学报》2019年第2期61-64,共4页Journal of Changchun Normal University
摘 要:为了获得最佳的ZnO纳米线制备条件,本文通过实验研究了水热法制备ZnO纳米线实验中反应物浓度及反应时间对ZnO纳米线形貌的影响。先采用sol-gel法在硅基底上进行ZnO籽晶层的制备,再采用水热法在籽晶层上进行了ZnO纳米线的生长,并通过扫描电子显微镜(SEM)进行了形貌表征。实验研究表明,当浓度为0. 05 mol·L^(-1),加热时间5 h,加热温度为160℃时,纳米线阵列取向性一致,形貌较好。In order to obtain the best preparation conditions of ZnO nanowires,the effects of reaction concentration and reaction time on the morphology of ZnO nanowires were studied experimentally.Firstly,ZnO seed layer was prepared on silicon substrate by sol-gel method,and then ZnO nanowires were grown on the seed layer by hydrothermal method.The morphology of ZnO nanowires was characterized by scanning electron microscopy(SEM).The experimental results show that the nanowire arrays have the same orientation and good morphology when the concentration is 0.05 mol·L^-1,the heating time is 5 h and the heating temperature is 160℃.
分 类 号:TN304.2[电子电信—物理电子学]
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