改造线切割机砂浆喷布系统成功降低砷化镓衬底翘曲度  

Reducing the Warpage of Gallium Arsenide Substrate by Modifying the Wire Cutting Machine Mortar Spraying System

作　　者：李穆朗 LI Mulang(The 46th Research Institute of China Electronics Technology Group Corporation,Tianjin 300201,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300201

出　　处：《天津科技》2019年第2期68-70,共3页Tianjin Science & Technology

摘　　要：砷化镓(Ga As)是继硅之后被研究最深入、应用最广泛的半导体材料,被广泛应用于光电子和微电子领域。2015年年底,中国电子科技信团公司第四十六研究所陆续突破了4英寸SI-GaAs衬底制备的一系列关键技术,使其研制的衬底顺利通过了中国电科55所p HEMT器件验证。目前研制的4英寸SI-Ga As衬底的翘曲度大幅改善,通过对比测试与进口产品基本一致。Gallium arsenide(GaAs)is the most in-depth and widely used semiconductor material after silicon,and is widely used in optoelectronics and microelectronics.At the end of 2015,The 46th Research Institute of China Electronics Technology Group Corporation successively broke through a series of key technologies for the preparation of 4-inch SI-GaAs substrates.The substrate developed successfully passed the verification of 55 pHEMT devices of China Electronics.The warpage of the 4-inch SI-GaAs substrate developed by China Electronics 46 has been greatly improved,and the comparison test is basically consistent with imported products.

关 键 词：翘曲度 磨粒 切割线 空载滑行 砂浆喷布系统 

分 类 号：TN305.1[电子电信—物理电子学]