磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究（英文）  

Preparation of nanocrystalline GZO/CdS bilayer films using magnetron sputtering and GZO/CdS/p-Si heterojunction photovoltaic device

作　　者：何波[1,2] 徐静 宁欢颇[1] 邢怀中 王春瑞[1] 张晓东 莫观孔 沈晓明 HE Bo;XU Jing;NING Huan-Po;XING Huai-Zhong;WANG Chun-Rui;ZHANG Xiao-Dong;MO Guan-Kong;SHEN Xiao-Ming(Department of Applied Physics,Donghua University,Shanghai,201620,China;Institute for Energy Technology,Instituttveien 18,2007 Kjeller,Norway;Instrumental Analysis and Research Center,Shanghai University,Shanghai 200444,China;School of Resoures,Environment and Materials,Guangxi University,Nanning 530004,China)

机构地区：[1]东华大学应用物理系,上海201620 [2]挪威能源技术研究所 [3]上海大学分析测试中心,上海200444 [4]广西大学资源环境与材料学院,广西南宁530004

出　　处：《红外与毫米波学报》2019年第1期44-49,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by Fund PLA General Armament Department"The 15th Five-year"weapons and Equipments Pre-research Field Fundation"Bas-ic application technology of graphene materials in batteries"(6140721040412)

摘　　要：采用磁控溅射制备Ga掺杂ZnO (GZO)/CdS双层膜在p型晶硅衬底上以形成GZO/CdS/p-Si异质结器件。纳米晶GZO/CdS双层膜的微结构、光学及电学特性,通过XRD、SEM、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征。GZO/CdS/p-Si异质结J-V曲线显示良好的整流特性。在±3 V时,整流比IF/IR(IF和IR分别表示正向和反向电流)已达到21。结果表明纳米晶GZO/CdS/p-Si异质结具有好的二极管特性,在反向偏压下获得高光电流密度。纳米晶GZO/CdS/p-Si异质结显示明显的光伏特性。由于CdS晶格常数在GZO和晶Si之间,它能作为一个介于GZO和晶Si之间的缓冲层,能有效地减少GZO和p-Si之间的界面态。因此,我们获得了GZO/CdS/p-Si异质结明显光伏特性。In this work,Ga doped ZnO(GZO)/CdS bilayer films were prepared on p-Si substrate by magnetron sputtering to form GZO/CdS/p-Si heterojunction device.The structural,optical and electrical properies of the nanocrystalline GZO/CdS bilayer films were studied by XRD,SEM,XPS,UV-VIS spectrophotometer and Hall effect measurement.The J-V curve of GZO/CdS/p-Si heterojunction device shows good rectifying behavior.And the value of IF/IR(IF and IR stand for forward and reverse current,respectively)at±3V is found to be as high as 21.The results indicate that the nanocrystalline GZO/CdS/p-Si heterojunction possesses good diode characteristic.High photocurrent density is obtained under a reverse bias.The nanocrystalline GZO/CdS/p-Si heterojunction device exhibits clear photovoltaic effect.Because the lattice constant of CdS is between GZO and Si,it can be used for a buffer layer between GZO and Si,to effectively reduce the interface states between GZO and p-Si.Therefore,we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.

关 键 词：纳米晶GZO/CdS双层膜 磁控溅射 异质结 电流-电压(I-V)特性 

分 类 号：TN21[电子电信—物理电子学] TN015