一种纳安量级的基准电流产生电路的设计  

Design of a reference current generating circuit of nanometer level

作　　者：王巍 刘明 杨欣斌[2] Wang Wei;Liu Ming;Yang Xinbin(National IC Design Shenzhen Industrial Centre,Shenzhen,Guangdong,China 518057;Sino-German School,Shenzhen Institute of Information Technology,Shenzhen,Guangdong,China 518172)

机构地区：[1]深圳集成电路设计产业化基地管理中心,广东深圳518057 [2]深圳信息职业技术学院中德学院,广东深圳518172

出　　处：《深圳信息职业技术学院学报》2018年第5期63-67,共5页Journal of Shenzhen Institute of Information Technology

基　　金：广东省科技计划项目(2014B090913001)

摘　　要：基准电流源能够为电路提供可靠的静态电流工作点,对电路与系统的高性能工作起到十分关键的作用。本文提出了一种基于MOS晶体管的温度补偿的纳安级参考电流产生电路,基于标准的0.18-mm CMOS工艺设计,且不需要使用双极性晶体管和电阻。详细分析了所提出的基准电流源的温度补偿原理。仿真结果表明,设计的电流基准源能在温度范围-20℃～100℃稳定地产生36.3 nA基准电流,温度系数为128 ppm/℃。本文提出的基准电流源电路在使用功耗受限的穿戴式医学芯片与系统中具有重大的应用潜力。The reference current source can provide a reliable quiescent current operating point for the circuit and plays a critical role in the high performance of the circuit and system.This paper proposes a temperaturecompensated nanoampere reference current generation circuit based on MOS transistors.It is based on standard 0.18-mm CMOS process design and does not require bipolar transistors and resistors.This paper also analyzes the principle of temperature compensation of the proposed reference current source in detail.The simulation results show that the designed current reference source can stably generate 36.3 nA reference current in the temperature range of-20℃~100℃,and the temperature coefficient is 128 ppm/℃.The proposed reference current source circuit has significant application potential in wearable medical chips and systems with limited power consumption.

关 键 词：基准源 电流基准源 温度补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]