三维互穿网络结构MoSi_2-RSiC复合材料导电行为的影响因素研究  

The Factors Affecting Electrical Conductivity Behaviors of MoSi_2-RSiC Composite with Three-dimensional Interpenetrating Network Structure

作　　者：袁铮[1] 程磊 刘小磐[1] 高朋召[1,2] 徐墨雨 肖汉宁[1] YUAN Zheng;CHENG Lei;LIU Xiaopan;GAO Pengzhao;XU Moyu;XIAO Hanning(College of Materials Science and Engineering, Hunan University, Changsha, 410082, Hunan, China;Hunan Province Key Laboratory for Spray Deposition Technology and Application, Hunan University, Changsha 410082, Hunan, China)

机构地区：[1]湖南大学材料科学与工程学院,湖南长沙410082 [2]湖南大学喷射沉积技术及应用湖南省重点实验室,湖南长沙410082

出　　处：《陶瓷学报》2019年第1期33-39,共7页Journal of Ceramics

基　　金：国家自然科学基金(51372078;51302076)

摘　　要：本文以再结晶碳化硅(RSiC)为基体,分别采用直接熔渗(MI)和前驱体浸渍裂解(PIP)-直接熔渗法(MI)来制备了MoSi_2-RSiC复合材料,探究了熔渗温度、基体密度和制备工艺对复合材料组成、微观结构和导电性能的影响。进而引入半定量计算和改进型混合规则探讨了复合材料导电行为的影响因素。结果表明:不同方法制备的MoSi_2-RSiC复合材料均为三维互穿网络结构,且PIP-MI法所制备的复合材料中,基体RSiC与MoSi_2界面结合性良好;两种复合材料的体积电阻率都随基体密度的降低和熔渗温度的升高而降低,MS-2.30-2050的体积电阻率为9.67×10^(-3)Ω·cm,为对应基体的1/1180。互穿网络结构对复合材料导电行为的影响较大,当基体密度为2.62 g/cm^3,I1为0.64;界面结合性对复合材料导电行为的影响主要受界面层厚度以及熔渗相体积分数的共同影响,其影响因子先增加后降低。复合材料中三维互穿网络结构对体积电阻率的影响高于界面结合性。In this paper, the MoSi2-RSiC composites were prepared via direct melt infiltration (MI) and precursor infiltration pyrolysis (PIP)-direct melt infiltration (MI), where recrystallized silicon carbide (RSiC) works as matrix. Effects of infiltration temperature, matrix density and preparation process on the composition, microstructure and electrical conductivity of the composites were investigated. Furthermore, semi quantitative calculation and modified mixing rule were introduced to explore the influencing factors of conductive behavior of composites. Results show that MoSi2-RSiC composites fabricated via these two methods both possess three-dimensional interpenetrating network structures, and composites obtained via PIP-MI method owns excellent interfacial combination. The volume resistivity of the composites decreasesd with the decreasing of the matrix density and the increasing of the infiltration temperature, the volume resistivity of MS-2.30-2050 was 9.67×10.3 Ω·cm, which was 1/1180 of the corresponding matrix. The interpenetrating network structure has remarkable influence on the conductive behavior of the composites. When the density of the matrix is 2.62 g/cm3, I1 is 0.64. The effect of the interface bonding on the conductive behavior of the composites is mainly affected by the thickness of the interface layer and the volume fraction of the infiltrated phase. With the density of the matrix increasing, the interface bonding factors increase first and then decrease. The effect of the interpenetrating network structure on the conductivity was stronger than the interfacial performance.

关 键 词：MoSi2-RSiC复合材料 导电性能 半定量计算 改进型混合规则 

分 类 号：TQ174.75[化学工程—陶瓷工业]