半导体器件物理与工艺的TCAD综合性实验设计  

TCAD Comprehensive Experimental Design of Physics and Technology of Semiconductor Device

作　　者：陈卉 师向群 胡云峰 文毅 CHEN Hui;SHI Xiangqun;HU Yunfeng;WEN Yi

机构地区：[1]电子科技大学中山学院电子信息学院,广东中山528402

出　　处：《科技创新与应用》2019年第6期20-23,27,共5页Technology Innovation and Application

基　　金：广东省教育厅质量工程和高等教育教学改革项目"基于学生能力培养的互联网+背景下微电子器件混合式教学资源建设"(编号:SJY201804);"半导体物理"(编号:S-ZXKC201803);全国教育信息技术研究课题"基于互联网+混合式教学资源开发与应用研究--半导体物理器件课程为例"(编号:186140105);"基于云平台的数字资源建设与教与学互动应用研究--以半导体物理课程为例"(编号:176140033);电子科技大学中山学院质量工程和高等教育教学改革项目"基于学生能力培养的互联网+背景下微电子器件混合式教学资源建设"(编号:JY201817);"基于互联网的<半导体物理>课程数字资源建设及‘教与学’互动应用研究"(编号:JY201703)

摘　　要：半导体器件物理与工艺课程主要让学生掌握半导体基本理论,器件基本结构、物理原理、特性及主要工艺技术对器件性能的影响。为了简化课程教学难度,提高教学质量,引入TCAD综合性实验设计。基础实验设计部分不仅能让学生更形象、直观的看到器件形貌、获取器件各参数,而且可以结合课程相关理论知识分析半导体工艺条件及器件结构参数对器件性能的影响,促进知识的转移、转化。创新性实验设计部分,学生根据已有的器件模型,自主设计其它性能器件,激发学生的学习兴趣,培养学生综合设计及创新能力。The course of semiconductor device physics and technology mainly enables students to master the basic theory of semiconductor,the basic structure,physical principle,characteristics of the device and the influence of the main process technology on the performance of the device.In order to simplify the difficulty of course teaching and improve the teaching quality,TCAD comprehensive experimental design is introduced.In the part of basic experimental design,students can not only see the shape of the device and obtain the parameters of the device more vividly and intuitively,but also analyze the influence of semiconductor process conditions and device structure parameters on the performance of the device in combination with the relevant theoretical knowledge of the course and promote the transfer and transformation of knowledge.In the part of innovative experimental design,students design other performance devices independently according to the existing device model.Thus,it is intended to stimulate students' interest in learning and cultivate students' comprehensive ability of design and innovation.

关 键 词：Athena工艺仿真器 Atlas器件仿真器 实际生产 PN结 

分 类 号：TN30[电子电信—物理电子学]