化学制备硫化铅芯片的光电性能研究  

Study on Photoelectric Properties of Chemically Prepared Lead Sulfide Chips

作　　者：邹红军 张翔 魏小梅 杨剑 ZOU Hongjun;ZHANG Xiang;WEI Xiaomei;YANG Jian(Shaanxi Huaxing Electronic Group Co., Ltd., Xianyang 712099, China)

机构地区：[1]陕西华星电子集团有限公司,陕西咸阳712099

出　　处：《电子工艺技术》2019年第1期54-57,共4页Electronics Process Technology

摘　　要：把具有一定光电性能的硫化铅芯片封装在不同结构的外壳中,就构成了各种各样的硫化铅红外探测器。通过化学沉淀的方法制作硫化铅芯片,并且对硫化铅芯片进行了温度处理。经过一段时间的存放后测试硫化铅芯片的表面形态、物质构成、内部结构和晶体生长方向等。根据测量结果研究了硫化铅芯片不同的微观结构对其光谱和光电性能的影响,确定了提高硫化铅芯片光电性能的研究方向。The lead sulfi de chip with certain photoelectric properties is packaged in the shell of different structures to form a variety of lead sulfi de infrared detectors. Lead sulfi de chips were prepared by chemical precipitation, and were treated at a certain temperature. The surface morphology, material composition, internal structure and crystal growth direction of lead sulfi de chip were tested after a period of storage. The effects of different microstructures on the spectrum and photoelectric properties of lead sulfide chips were studied according to the test results, and the research direction of improving the photoelectric properties of lead sulfi de chips was determined.

关 键 词：硫化铅芯片 化学沉淀 微观结构 光电性能 

分 类 号：TN362[电子电信—物理电子学]