石墨烯改性PDC-SiCNO陶瓷的制备及其介电性能  

Preparation of graphite modified PDC-SiCNO ceramics and its dielectric properties

作　　者：余煜玺[1] 夏范森 黄奇凡 YU Yu-xi;XIA Fan-sen;HUANG Qi-fan(Fujian Key Laboratory of Advanced Materials,Department ofMaterials Science and Engineering,College of Materials,Xiamen University,Xiamen 361005,Fujian,China)

机构地区：[1]厦门大学材料学院材料科学与工程系福建省特种先进材料重点实验室,福建厦门361005

出　　处：《材料工程》2019年第3期8-14,共7页Journal of Materials Engineering

基　　金：国家自然科学基金项目(51675452);装备预研基金项目(6140923020301);反应堆燃料及材料重点实验室基金(6142A0604030817)

摘　　要：以聚乙烯基硅氮烷(PVSZ)为原料,氧化石墨烯(GO)为碳源,无水乙醇(ETOH)为分散剂,制备石墨烯球增强SiCNO陶瓷(SiCNO-GO)。利用拉曼光谱(Raman)、电子自旋共振(EPR)和扫描电子显微镜(SEM)等表征手段,研究SiCNO-GO陶瓷结构对其介电性能的影响。结果表明:SiCNO-GO陶瓷的微球密度和粒径的大小与GO的含量有关;随着SiCNO-GO陶瓷中GO含量的增加,SiCNO-GO陶瓷的介电常数和介电损耗也随之增大,在GO含量为0.1%(质量分数)时达到最大值,而当GO质量分数为0.3%时,SiCNO-GO陶瓷的介电常数和介电损耗降低。Graphene ball reinforced SiCNO ceramics (SiCNO-GO) were prepared by using polyvinylsi-lazane (PVSZ) as raw material and graphene oxide (GO) as carbon source and anhydrous ethanol (ETOH) as dispersant. X-ray diffraction (XRD), Raman spectroscopy (Raman), electron spin resonance (EPR) and SEM were used to study the effect of SiCNO-GO ceramics on the dielectric properties. The results show that the microsphere density and particle size of SiCNO-GO ceramics are related to the content of GO. With the increase of GO content in SiCNO-GO ceramics, the dielectric constant and dielectric loss of SiCNO-GO ceramics also increase, reach the maximum value when the GO mass fraction is 0.1%. When the GO mass fraction is 0.3%, the dielectric constant and dielectric loss of the SiCNO-GO ceramics decrease.

关 键 词：聚合物先驱体陶瓷 石墨烯 电学性能 制备 

分 类 号：TB332[一般工业技术—材料科学与工程] TB321