基于硅基微结构高性能太赫兹波电控调制器  

High performance electrically modulators based on silicon microstructure with VO_2 films for terahertz applications

作　　者：代朋辉 唐亚华 杨青慧[1] 张怀武[1] 文岐业[1] DAI Penghui;TANG Yahua;YANG Qinghui;ZHANG Huaiwu;WEN Qiye(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu Sichuan 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《太赫兹科学与电子信息学报》2019年第1期29-34,共6页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(51572042);国家国际科技合作专项资助项目(2015DFR50870);国家科学挑战计划资助项目(TZ2018003);四川省科技支撑资助项目(2014GZ0091;2015GZ0069;2014GZ0003)

摘　　要：通过硅基微结构与二氧化钒(VO_2)相变薄膜相结合,设计并实现了一种电控太赫兹幅度调制器件。该调制器具有很高的太赫兹波透射率与极低的器件插损,同时具有大的工作带宽和调制深度。仿真和实验测试结果表明,该调制器对太赫兹波的增透响应带宽为0.25～0.95 THz波段。在0.4～0.85 THz频段内(约450 GHz宽带)的透射率超过80%,相较于硅衬底的透射率增加了10%以上,且透射率最高可达85%。对该器件电调控后,调制深度可达76%以上,器件透射率变化幅度可达65%。因低插损、大调制幅度以及宽工作带宽,该太赫兹调制器在太赫兹成像和通信系统中具有重要的应用价值。An electronically controlled terahertz amplitude modulation device is designed and implemented by integrating silicon-based microstructure with vanadium dioxide phase-change film.This device has a high transmittance of terahertz waves and very low insertion loss of the device,while having a large operating bandwidth and modulation depth.Simulation and experimental results show that the modulator's response bandwidth for the increased transmission effect of terahertz waves is 0.25-0.95 THz.The transmission of the modulator is over 80%in the frequency range of 0.4-0.85 THz,and compared with the transmission of high resistance silicon wafer,it is increased by over 10%.And the transmittance of the modulator can be up to 85%.After the device is electrically controlled,the modulation depth can reach more than 76%,and the change range of the modulator's transmittance can reach 65%.An important application value of the THz modulator is demonstrated in terahertz imaging and communication system,because of its low insertion loss,large modulation amplitude and wide working bandwidth.

关 键 词：太赫兹波 微米结构 调制器 VO2薄膜 绝缘体金属相变 

分 类 号：TN304.2[电子电信—物理电子学]