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作 者:Chunyu Xie Shaolong Jiang Xiaolong Zou Yuanwei Sun Liyun Zhao Min Hong Shulin Chen Yahuan Huan Jianping Shi Xiebo Zhou Zhepeng Zhang Pengfei Yang Yuping Shi Porun Liu Qing Zhang Peng Gao Yanfeng Zhang
机构地区:[1]Department of Materials Science and Engineering,College of Engineering,Peking University,Beijing 100871,China [2]Center far Nanochemistry(CNC),Beijing National Laboratory for Molecular Sciences,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871,China [3]Tsinghua-Berkeley Shenzhen Institute(TBSI),Tsinghua University,Shenzhen 518055,China [4]Electron Microscopy Laboratory,School of Physics,Peking University,Beijing 100871,China [5]International Center for Quantum Materials,School of Physics,Peking University,Beijing 100871,China [6]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China [7]Centre for Clean Environment and Energy,Griffith University,Gold Coast 4222,Australia [8]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China
出 处:《Nano Research》2019年第1期149-157,共9页纳米研究(英文版)
基 金:the National Natural Science Foundation of China(Nos.51472008,51861135201,51290272,61774003,51502007,and 51672007);the National Key Research and Development Program of China(Nos.2016YFA0200103,2017YFA0205700,and 2017YFA0304600);the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Nos.KF201601 and KF201604);"2011 Program”Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter.
摘 要:Vertical heterostructures based on two-dimensional(2D)materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices.Herein,we report the direct construct!on of an abnormal graphene/ReSe2 stack on Au foils by a two-step chemical vapor deposition(CVD)strategy.During the second growth stage,mono layer ReSe2 is found to prefere ntially evolve at the irUerface between the first-grown graphene layer and the Au substrate.The unusual stacking behavior is unraveled by in-situ"cutting open"the upper graphene from the defects to expose the lower ReSe2 using scanning tunneling microscopy(STM).From combination of these results with density functional theory calculations,the domain boundaries and edge sites of graphene are proposed to be adsorption sites for Re and Se precursors,further facilitating the growth of ReSe2 at the van der Waals gap of graphene/Au.This work hereby offers an intriguing strategy for obtaining vertical 2D heterostructures featured with an ultra-clean interface and a designed stacking geometry.
关 键 词:GRAPHENE RHENIUM SELENIDE chemical vapor deposition seanning tunneling microscopy two-dimensional(2D)heterostructure
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