In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity  

作　　者：Ranran Zhuo Longhui Zeng Huiyu Yuan Di Wu Yuange Wang Zhifeng Shi Tingting Xu Yongtao Tian Xinjian Li Yuen Hong Tsang 

机构地区：[1]School of Physics and Engineering,and Key Laboratory of Material Physics,Zhengzhou University,Zhengzhou 450052,China [2]Department of Applied Physics and Materials Research Center,The Hong Kong Polytechnic University,Hung Hom,Kowloon,Hong Kong,China

出　　处：《Nano Research》2019年第1期183-189,共7页纳米研究（英文版）

基　　金：the National Natural Science Foundation of China(Nos.61605174 and 61774136);the Key Projects of Higher Education in Henan Province(No.17A140012);Research Grants Council,University Grants Committee(RGC,UGC)(GRF 152109/16E PolyU B-Q52T).

摘　　要：The research of ultraviolet photodetectors(UV PDs)have been attracting extensive attention,due to their important applications in many areas.In this study,PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional(2D)PtSe2 film on n-GaN substrate.The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage.Further analysis reveals that a high responsivity of 193 mA·W^-1,an ultrahigh specific detectivity of 3.8 × 10^14 Jones,linear dynamic range of 155d B and current on/off ratio of^10^8,as well as fast response speeds of 45/102μs were obtained at zero bias voltage.Moreover,this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns.Such high-performanee PtSe2/GaN heteroj u nction UV PD demonstrated in this work is far superior to previously reported results,suggesting that it has great potential for deep UV detection.

关 键 词：PtSe2 HETEROJUNCTION deep ULTRAVIOLET PHOTODETECTORS SELF-POWERED 

分 类 号：O4[理学—物理]