自旋极化输运的方法讨论  

Discussion on Methods of Spin Polarization Transport

作　　者：李慧 周鸣宇 吴世永 LI Hui;ZHOU Ming-yu;WU Shi-yong(Basic College,Naval Aviation University,Yantai,Shandong 264001,China)

机构地区：[1]海军航空大学基础学院,山东烟台264001

出　　处：《教育教学论坛》2019年第17期223-224,共2页Education And Teaching Forum

摘　　要：电子自旋注入和自旋相关输运是自旋电子学中被广泛研究的课题。本文将介绍在自旋电子学器件上具有广泛应用前景的不同结构中物理原理相关的材料问题,如F/I/S隧穿、F/I/F隧穿、Andreev反射。Electron spin injection and spin-dependent transport have been extensively studied in spintronics.This paper will introduce the material problems related to physical principles in different structures with broad application prospect in spintronics devices.For example F/I/S tunneling,F/I/F tunneling,Andreev reflection.

关 键 词：F/I/S隧穿 F/I/F隧穿 ANDREEV反射 

分 类 号：G642.0[文化科学—高等教育学]