一种高精度低温漂带隙基准电路的设计与实现  

Design and realization of a high-precision and low temperature drift reference circuit

作　　者：刘晓轩[1] 张玉明[1] 季轻舟[2] 曹天骄[2] LIU Xiaoxuan;ZHANG Yuming;JI Qingzhou;CAO Tianjiao(The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian Univ., Xi'an 710071, China;Xi’an Microelectronic Technology Institute,Xi'an 710065, China)

机构地区：[1]西安电子科技大学宽禁带半导体技术国防重点学科实验室,陕西西安710071 [2]西安微电子技术研究所,陕西西安710065

出　　处：《西安电子科技大学学报》2019年第2期41-46,共6页Journal of Xidian University

摘　　要：针对带隙基准电路对集成电路精度的影响,提出了一种新的低温漂带隙基准电路。通过分段温度补偿,补偿了带隙基准电路,减小了温度漂移,优化了基准的温度性能。基于西岳公司3μm18V双极工艺,设计了基准电路和版图,并进行流片。仿真和流片结果表明:在典型工艺角下,基准在-55℃～125℃内,温度系数为1.7×10-6～6.0×10-6/℃;在2.2V的电源幅度范围下,具有0.03mV/V的电源抑制特性。该电路已成功应用于一款线性稳压电源中。A novel bandgap reference circuit with a low temperature coefficient is presented,which compensates the voltage slightly and optimizes the temperature characteristic by setting up a subsection compensation circuit.The circuit and its layout have been done by the 3μm 18 VBipolar process in the No.771 Institute.Simulation and fabrication results show that the temperature coefficient of the voltage reference is 1.7×10^-6~6.0×10^-6/℃ at-55℃~125℃ under the condition of the 2.2 V wide input voltage range,and that the circuit possesses the power supply rejected characteristic of 0.03 mV/V.This circuit and its layout have been successfully applied to a low-dropout regulator.

关 键 词：带隙基准 分段温度补偿 高阶温度特性 

分 类 号：TN431[电子电信—微电子学与固体电子学]