Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon  

作　　者：XIAODONG QIU ZIJING WANG XIAOTONG HOU XUEGONG YU DEREN YANG 

机构地区：[1]State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University

出　　处：《Photonics Research》2019年第3期351-358,共8页光子学研究（英文版）

基　　金：National Natural Science Foundation of China(NSFC)(51532007,61574124,61721005)

摘　　要：Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor(CMOS)compatible visible-blind short-wavelength infrared(SWIR) silicon photodetector is of interest for security,telecommunications, and environmental sensing. Here, we present a silver-supersaturated silicon(Si:Ag)-based photodetector that exhibits a visible-blind and highly enhanced sub-bandgap photoresponse. The visible-blind response is caused by the strong surface-recombination-induced quenching of charge collection for short-wavelength excitation, and the enhanced sub-bandgap response is attributed to the deep-level electrontraps-induced band-bending and two-stage carrier excitation. The responsivity of the Si:Ag photodetector reaches 504 mA · W^(-1) at 1310 nm and 65 m A · W^(-1) at 1550 nm under-3 V bias, which stands on the stage as the highest level in the hyperdoped silicon devices previously reported. The high performance and mechanism understanding clearly demonstrate that the hyperdoped silicon shows great potential for use in optical interconnect and power-monitoring applications.Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor(CMOS)compatible visible-blind short-wavelength infrared(SWIR) silicon photodetector is of interest for security,telecommunications, and environmental sensing. Here, we present a silver-supersaturated silicon(Si:Ag)-based photodetector that exhibits a visible-blind and highly enhanced sub-bandgap photoresponse. The visible-blind response is caused by the strong surface-recombination-induced quenching of charge collection for short-wavelength excitation, and the enhanced sub-bandgap response is attributed to the deep-level electrontraps-induced band-bending and two-stage carrier excitation. The responsivity of the Si:Ag photodetector reaches 504 mA · W^(-1) at 1310 nm and 65 m A · W^(-1) at 1550 nm under-3 V bias, which stands on the stage as the highest level in the hyperdoped silicon devices previously reported. The high performance and mechanism understanding clearly demonstrate that the hyperdoped silicon shows great potential for use in optical interconnect and power-monitoring applications.

关 键 词：Visible-blind short-wavelength infrared photodetector hyperdoped silicon complementary metal-oxide-semiconductor(CMOS) 

分 类 号：O4[理学—物理]