Structural,electrical and photoluminescence properties of Er^3+-doped SrBi4Ti4O15-Bi4Ti3O12 inter-growth ceramics  

作　　者：Fang LIU Xiangping JIANG Chao CHEN Xin NIE Xiaokun HUANG Yunjing CHEN Hao HU Chunyang SU 

机构地区：[1]Jiangxi Key Laboratory of Advaneed Ceramic Materials,School of Materials Science and Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333403,China

出　　处：《Frontiers of Materials Science》2019年第1期99-106,共8页材料学前沿（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.51562014,51602135,51862016,51762024 and 61671224);the Natural Science Foundation of Jiangxi Province(20171BAB216012);the Foundation of Jiangxi Provincial Education Department(GJJ170789,GJJ170794 and GJJ170804).

摘　　要：Er^3+-doped SrBi4Ti4O15-Bi4Ti3O12(SBT-BIT-xEr^3+,x=0.00,0.05,0.10,0.15 and 0.20)inter-growth ceramics were synthesized by the solid-state reaction method.Structural,electrical and up-conversion properties of SBT-BIT-xEr^3+ were investigated.All samples showed a single phase of the orthorhombic structure.Raman spectroscopy indicated that the Er^3+ substitution for Bi^3+ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT-BIT-xEr^3+ ceramics.The substitution of Bi^3+ by Er^3+ leads to a decrease of dielectric loss tanδ and an increase of conductivity activation energy.Piezoelectric constant d33 was slightly improved,but dielectric constant was decreased with the Er^3+ doping.The SBT-BIT-xEr^3+ ceramic with x=0.15 exhibits the optimized electrical behavior(d33~17 pC/N,tanδ~0.83%).Moreover,two bright green(532 and 548 nm)and one red(670 nm)emission bands were observed under the 980 nm excitation.Optimized emission intensity was also obtained when x=0.15 for the SBT-BIT-xEr^3+ ceramic.Therefore,this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.

关 键 词：inter-growth structure ELECTRICAL property multifunctional optoelectronic material PHOTOLUMINESCENCE 

分 类 号：TB[一般工业技术]