CVD金刚石热沉封装高功率半导体激光器的热特性  

Thermal performance of high power semiconductor lasers packaged on CVD diamond heatsink

作　　者：戴玮 李嘉强 曹剑[1,2] 张志忠 张晓卫[1,2] 杨保和 DAI Wei;LI Jia-qiang;CAO Jian;ZHANG Zhi-zhong;ZHANG Xiao-wei;YANG Bacrhe(Science and Technology on Particle Transport and Separation Laboratory, Tianjin 300180,China;Research Institute of Physical and Chemical Engineering of Nuclear Industry,Tianjin 300180 China;College of Electronic Information and Engineering Tianjin University of Technology ,Tianjin 300384,China)

机构地区：[1]粒子输运与富集技术国防科技重点实验室,天津300180 [2]核工业理化工程研究院,天津300180 [3]天津理工大学电信工程学院,天津300384

出　　处：《光电子．激光》2019年第3期227-233,共7页Journal of Optoelectronics·Laser

基　　金：国家重点研发计划(2016YFB0402700);中国博士后科学基金(2017M621045);天津市企业博士后创新项目择优资助(TJQYBSH2017016)资助项目

摘　　要：本文以自支撑CVD金刚石膜作为半导体激光器线阵的封装热沉,从而改进其热特性。首先,以电子辅助化学气相沉积(EACVD)制备自支撑金刚石膜。在沉积工艺中,提出了优化O_2流量刻蚀非金刚石相,使金刚石膜品质得到改进,从而提高其导热率。然后,测试了基于不同氧流量下制备金刚石热沉封装的半导体激光器线阵的电光特性,并对封装器件的热特性进行了分析。结果表明:通入O_2流量为每分钟5 sccm时,制备的金刚石热沉导热率可达1 812.3 WK^(-1)m^(-1)。O_2流量5 sccm制备金刚石热沉的封装器件的斜率效率为1.30 W/A,电光转换效率最大值可达60.6%。在连续波30 A时,该封装器件的光谱红移波长为2.02 nm,器件工作温度降低4.9 K。器件的传热路径热阻降低28.4%,表现出优异的可靠性。In this paper, semiconductor laser bars were packaged on self-standing CVD diamond films as heatsinks to improve the thermal performance of the devices. At first,the self-standing diamond films were prepared by electron-assisted chemical vapor deposition (EACVD). Improving the quality of diamond films by aciding CX at an optimized flow rate to etch non-diamond phase was adopted in deposition process,and thermal conductivity of diamond films was improved consequently. Then, electro-opticdl characteristics of semiconductor lasers packaged on different diamond heatsinks that were prepared at different O2 flow rates were measured, and thermal performance of the packaged devices was analyzed. The results show that thermal conductivity of the diamond heatsink prepared at O2 flow rate of 5 seem could reach 1 812. 3 WK^-1 m^-1. The slope efficiency of the device is 1. 30 W/A,and the peak electro-optical conversion efficiency is 60. 6%. The red shift wavelength of the packaged device is 2. 02 nm under continuous wave of 30 A.and operating temperature is reduced by 4. 9 K. The thermal resistance of heat transfer path of the device is reduced by 28. 4%,and excellent reliability is shown.

关 键 词：半导体激光器 CVD金刚石热沉 导热率 热特性 

分 类 号：TN29[电子电信—物理电子学]