Delta-doped quantum wire tunnel junction for highly concentrated solar cells  

作　　者：Ali Bahrami Mahyar Dehdast Shahram Mohammadnejad Habib Badri Ghavifekr 

机构地区：[1]Optoelectronics and Nanophotonics Research Laboratory (ONRL), Electrical and Electronics Engineering Department,Sahand University of Technology [2]Nanoptronics Research Center, Electrical and Electronics Engineering Department,Iran University of Science and Technology [3]Microelectronics Research Laboratory, Department of Electrical Engineering, Sahand University of Technology

出　　处：《Chinese Physics B》2019年第4期275-279,共5页中国物理B（英文版）

摘　　要：We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration.The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration.The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.

关 键 词：DELTA-DOPING QUANTUM wire solar cell TUNNEL JUNCTION 

分 类 号：O4[理学—物理]