Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga_2O_3  

作　　者：Chao Yang Hongwei Liang Zhenzhong Zhang Xiaochuan Xia Heqiu Zhang Rensheng Shen Yingmin Luo Guotong Du 杨超;梁红伟;张振中;夏晓川;张贺秋;申人升;骆英民;杜国同(School of Microelectronics Dalian University of Technology;State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences)

机构地区：[1]School of Microelectronics Dalian University of Technology [2]State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences

出　　处：《Chinese Physics B》2019年第4期375-380,共6页中国物理B（英文版）

基　　金：Project supported by National Key Research and Development Plan of China(Grant Nos.2016YFB0400600 and 2016YFB0400601);the National Natural Science Foundation of China(Grant Nos.61574026,11675198,61774072,and 11405017);the Natural Science Foundation of Liaoning Province,China(Grant Nos.201602453 and 201602176);China Postdoctoral Science Foundation Funded Project(Grant No.2016M591434);the Dalian Science and Technology Innovation Fund(Grant No.2018J12GX060)

摘　　要：A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) transmittance.The quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) transmittance.The quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.

关 键 词：Ga2O3 single crystal solar-blind PHOTODETECTOR high temperature 

分 类 号：O4[理学—物理]