垂直腔面发射激光器氧化孔结构对器件激射性能的影响  

Influence of Oxide Aperture Structure on Lasing Performance for Vertical Cavity Surface Emitting Laser

作　　者：梁静 贾慧民[1] 冯海通 唐吉龙[1] 房丹[1] 苏瑞巩[2] 张宝顺[2] 魏志鹏[1] Liang Jing;Jia Huimin;Feng Haitong;Tangjilong;Fang Dan;Su Ruigong;Zhang Baoshun;Wei Zhipeng(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,Jilin 130022,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,China)

机构地区：[1]长春理工大学理学院高功率半导体激光器国家重点实验室,吉林长春130022 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《中国激光》2019年第3期12-17,共6页Chinese Journal of Lasers

基　　金：国家重点研发计划项目(2017YFB0402800);国家自然科学基金(61504010;61504022);吉林省科技厅中青年科技创新领军人才及团队项目(20160519007JH);吉林省科技厅重大科技招标专项(20160203015GX)

摘　　要：为实现894.6 nm低阈值、高稳定性、单模激光输出,设计了具有不同台面刻蚀结构的垂直腔面发射激光器(VCSEL)器件,研究了台面直径和氧化孔结构对器件激射性能的影响。研究结果表明:VCSEL台面直径越大,阈值电流越大;氧化孔径越偏向圆形,边模抑制比越高。制备了氧化孔为圆形、直径为4.4μm的VCSEL器件,该器件在70～90℃工作温度及0.6 mA驱动电流下实现了894.6 nm单模激光输出,边模抑制比高于35 dB。In order to realize 894.6 nm single mode laser output with low threshold,high stability,we design vertical cavity surface emitting laser(VCSEL)devices with different mesa etching structure and study the influences of mesa diameter,oxide aperture shape and size on lasing performance.The research results show that the larger of the mesa in VCSEL device,the higher the threshold current;the more circular the oxide aperture,the higher the single mode suppression ratio.VCSEL devices with diameter of 4.4μm circular oxide aperture is achieved,and the device can realize 894.6 nm single mode laser output with driving current of 0.6 mA and working temperature of 70-90℃,and the side mode suppression ratio is higher than 35 dB.

关 键 词：激光器 垂直腔面发射激光器 台面结构 氧化孔 激射性能 边模抑制比 

分 类 号：TN248.4[电子电信—物理电子学]