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作 者:周鑫[1] 田晔非 ZHOU Xin;TIAN Yefei(Department of Communication Engineering,Chongqing College of electronic engineering,Chongqing 401331,China;College of Electrical Engineering of Chongqing University,Chongqing 400044,China)
机构地区:[1]重庆电子工程职业学院通信工程学院,重庆401331 [2]重庆大学电气工程学院,重庆400044
出 处:《电子器件》2019年第2期394-398,共5页Chinese Journal of Electron Devices
基 金:重庆市教委科学技术研究项目(KJ1729404)
摘 要:为了提高相位噪声性能,提出了一种基于阻抗变换模块的新型无尾电流源电感电容(LC)压控振荡器。该阻抗变换模块位于交叉耦合晶体管的漏极与栅极之间,能够减少有源器件产生的噪声,并且交叉耦合晶体管主要位于饱和区域,能够防止LC谐振腔的品质因数降低。此外,相较于传统LC振荡器,该振荡器在低电压工作条件下能够维持低相位噪声性能,并采用0.18μm CMOS工艺进行了具体实现。实验结果表明:在3 MHz偏移频率的条件下,提出的振荡器相位噪声范围为-138.8 dBc/Hz~-141.1 dBc/Hz,调谐范围增加了大约22.8%。在此调谐范围内,与其他提LC压控振荡器相比,所提方法具有更大的品质因数更好,具体为191.8 dBc/Hz。In order to improve the performance of phase noise,a novel voltage controlled oscillator(LC)based on impedance transformation module is proposed.The impedance transformation module is located between the drain and the grid of the cross coupling transistor,it can reduce the noise generated by the active devices,and the cross coupling transistor is mainly located in the saturation region,which can prevent the quality factor of the LC cavity from decreasing.In addition compared it to conventional LC oscillators,the oscillator maintains low phase noise performance at low voltage operating conditions and it was implemented using a 0.18μm CMOS process.The experimental results show that under the condition of 3 MHz offset frequency,the phase noise range of the proposed oscillator is-138.8 dBc/Hz^141.1 dBc/Hz,and the tuning range is increased by approximately 22.8%.Within this tuning range,the proposed method has a better quality factor than other LC voltage controlled oscillators,the specific value is 191.8 dBc/Hz.
分 类 号:TN75[电子电信—电路与系统]
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