D波段InP基高增益低噪声放大芯片的设计与实现（英文）  

Design and realization of D-band InP MMIC amplifier with high-gain and low-noise

作　　者：刘军 吕昕 于伟华 杨宋源 侯彦飞 LIU Jun;LUY Xin;YU Wei-Hua;YANG Song-Yuan;HOU Yan-Fei(Beijing Key Laboratory of Millimeter Wave and Terahertz Techniques,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]北京理工大学毫米波与太赫兹技术北京市重点实验室,北京100081

出　　处：《红外与毫米波学报》2019年第2期144-148,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61771057)

摘　　要：利用90nmInAlAs/InGaAs/InPHEMT工艺设计实现了两款D波段(110～170GHz)单片微波集成电路放大器.两款放大器均采用共源结构,布线选取微带线.基于器件A设计的三级放大器A在片测试结果表明:最大小信号增益为11.2dB@140GHz,3dB带宽为16GHz,芯片面积2.6mm×1.2mm.基于器件B设计的两级放大器B在片测试结果表明:最大小信号增益为15.8dB@139GHz,3dB带宽12GHz,在130～150GHz频带范围内增益大于10dB,芯片面积1.7mm×0.8mm,带内最小噪声为4.4dB、相关增益15dB@141GHz,平均噪声系数约为5.2dB.放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数.该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义.In this paper,two D-band(110~170 GHz)monolithic millimeter-wave integrated circuit(MMIC)amplifiers have been designed and realized using 90-nm InA lAs/InG aAs/InP high gain electron mobility transistors(HEMT)technology.The amplifiers are developed in common source and microstrip technology.The three-stage MMIC amplifier A is designed based on device A and measured on wafer with a small-signal peak gain of 11.2 dB at 140 GHz and 3-dB-bandwidth is 16 GHz with a chip size of 2.6 mm×1.2 mm.The two-stage MMIC amplifier B is designed based on device B and measured on wafer with a small-signal peak gain of 15.8 dB at 139 GHz and3-dB-bandwidth is 12 GHz and the gain is higher than 10 dB from 130 GHz to 150 GHz with a chip size of 1.7 mm×0.8 mm.The amplifier B also shows an excellent noise character with noise figure of 4.4 dB when the associated gain of 15 dB is acquired at 141 GHz and the average noise figure is about 5.2 dB over the bandwidth.The amplifier B exhibits a higher gain-per-stage,competitive gain-area ratio and lower noise figure.The successful realization of MMIC amplifiers is of great potential for receiver-front-end applications at D-band.

关 键 词：InAlAs/InGaAs/InP 赝高电子迁移率晶体管(PHEMTs) 90nm 单片微波集成电路(MMIC) 放大器 D波段 

分 类 号：O43[机械工程—光学工程]